Low operating bias and matched input-output characteristics in graphene logic inverters

Song Lin Li, Hisao Miyazaki, Akichika Kumatani, Akinobu Kanda, Kazuhito Tsukagoshi

Research output: Contribution to journalArticlepeer-review

98 Citations (Scopus)


We developed a simple and novel method to fabricate complementary-like logic inverters based on ambipolar graphene field-effect transistors (FETs). We found that the top gate stacks (with both the metal and oxide layers) can be simply prepared with only one-step deposition process and show high capacitive efficiency. By employing such a top gate as the operating terminal, the operating bias can be lowered within 2 V. In addition, the complementary p- and n-type FET pairs can be also simply fulfilled through potential superposition effect from the drain bias. The inverters can be operated, with up to 4-7 voltage gains, in both the first and third quadrants due to the ambipolarity of graphene FETs. For the first time, a match between the input and output voltages is achieved in graphene logic devices, indicating the potential in direct cascading of multiple devices for future nanoelectronic applications.

Original languageEnglish
Pages (from-to)2357-2362
Number of pages6
JournalNano Letters
Issue number7
Publication statusPublished - 2010 Jul 14
Externally publishedYes


  • Alumina dielectric
  • Graphene
  • Inverter
  • Logic gate
  • Nanoelectronics

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering


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