Low Noise Balanced-CMOS on Si(110) surface for Analog/Digital Mixed Signal Circuits

A. Teramoto, T. Hamada, H. Akahori, K. Nii, T. Suwa, K. Kotani, M. Hirayama, S. Sugawa, T. Ohmi

Research output: Contribution to journalConference article

33 Citations (Scopus)

Abstract

This paper demonstrated the CMOS characteristics on Si(110) surface by using surface flattening process and radical oxidation. By forming a MOS device on Si(110) surface, the high-speed and low 1/f noise p-MOSFET can be realized. Furthermore, the current drivability of p-MOS and n-MOS has balanced in the CMOS (balanced CMOS) on Si(110) surface can be also realized. These are very useful to the analog/digital mixed signal circuits.

Original languageEnglish
Pages (from-to)801-804
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 2003 Dec 1
EventIEEE International Electron Devices Meeting - Washington, DC, United States
Duration: 2003 Dec 82003 Dec 10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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