@article{d710f46b7d274efebe67b2ad6e7a4e53,
title = "Low magnetic damping and large negative anisotropic magnetoresistance in half-metallic Co2-xMn1+xSi Heusler alloy films grown by molecular beam epitaxy",
abstract = "Co2-xMn1+xSi films with various composition x were epitaxially grown using molecular beam epitaxy (MBE). High crystallinity and atomic ordering in the prepared Co2-xMn1+xSi films were observed, and their magnetic damping and anisotropic magnetoresistance (AMR) effect were systematically investigated. An ultra-low magnetic damping constant of 0.0007 was obtained in the Co2-xMn1+xSi film with a valence electron number (NV) of about 29.0. Additionally, a relatively large negative AMR effect was observed in the Co2-xMn1+xSi films that had a NV of about 29.0. This low damping and the large negative AMR effect indicate that epitaxial Co2-xMn1+xSi films with high atomic ordering grown by MBE possess a high-spin polarization.",
author = "Mikihiko Oogane and McFadden, {Anthony P.} and Kenji Fukuda and Masakiyo Tsunoda and Yasuo Ando and Palmstr{\o}m, {Chris J.}",
note = "Funding Information: This work was supported by the Center for Spintronics Research Network (CSRN), S-Innovation program, Japan Science and Technology Agency (JST), and U.S. Department of Energy (DE-SC0014388). The MBE growth, X-ray diffraction, and magnetic characterization performed at the University of California Santa Barbara (UCSB) were supported by the U.S. Department of Energy (DE-SC0014388). This research made use of shared facilities of the UCSB Materials Research Science and Engineering Center (NSF DMR 1720256), a member of the Materials Research Facilities Network. Funding Information: This work was supported by the Center for Spintronics Research Network (CSRN), S-Innovation program, Japan Science and Technology Agency (JST), and U.S. Department of Energy (DE-SC0014388). The MBE growth, X-ray diffraction, and magnetic characterization performed at the University of California Santa Barbara (UCSB) were supported by the U.S. Department of Energy (DESC0014388). This research made use of shared facilities of the UCSB Materials Research Science and Engineering Center (NSF DMR 1720256), a member of the Materials Research Facilities Network. Publisher Copyright: {\textcopyright} 2018 Author(s).",
year = "2018",
month = jun,
day = "25",
doi = "10.1063/1.5030341",
language = "English",
volume = "112",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "26",
}