Low magnetic damping and large negative anisotropic magnetoresistance in half-metallic Co2-xMn1+xSi Heusler alloy films grown by molecular beam epitaxy

Mikihiko Oogane; Anthony P. McFadden; Kenji Fukuda; Masakiyo Tsunoda; Yasuo Ando; Chris J. Palmstrøm

doi:10.1063/1.5030341

Low magnetic damping and large negative anisotropic magnetoresistance in half-metallic Co_2-xMn_1+xSi Heusler alloy films grown by molecular beam epitaxy

Mikihiko Oogane, Anthony P. McFadden, Kenji Fukuda, Masakiyo Tsunoda, Yasuo Ando, Chris J. Palmstrøm

Research output: Contribution to journal › Article

10 Citations (Scopus)

Abstract

Co_2-xMn_1+xSi films with various composition x were epitaxially grown using molecular beam epitaxy (MBE). High crystallinity and atomic ordering in the prepared Co_2-xMn_1+xSi films were observed, and their magnetic damping and anisotropic magnetoresistance (AMR) effect were systematically investigated. An ultra-low magnetic damping constant of 0.0007 was obtained in the Co_2-xMn_1+xSi film with a valence electron number (N_V) of about 29.0. Additionally, a relatively large negative AMR effect was observed in the Co_2-xMn_1+xSi films that had a N_V of about 29.0. This low damping and the large negative AMR effect indicate that epitaxial Co_2-xMn_1+xSi films with high atomic ordering grown by MBE possess a high-spin polarization.

Original language	English
Article number	262407
Journal	Applied Physics Letters
Volume	112
Issue number	26
DOIs	https://doi.org/10.1063/1.5030341
Publication status	Published - 2018 Jun 25

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Oogane, M., McFadden, A. P., Fukuda, K., Tsunoda, M., Ando, Y., & Palmstrøm, C. J. (2018). Low magnetic damping and large negative anisotropic magnetoresistance in half-metallic Co_2-xMn_1+xSi Heusler alloy films grown by molecular beam epitaxy. Applied Physics Letters, 112(26), [262407]. https://doi.org/10.1063/1.5030341

Low magnetic damping and large negative anisotropic magnetoresistance in half-metallic Co_2-xMn_1+xSi Heusler alloy films grown by molecular beam epitaxy. / Oogane, Mikihiko; McFadden, Anthony P.; Fukuda, Kenji; Tsunoda, Masakiyo ; Ando, Yasuo; Palmstrøm, Chris J.

In: Applied Physics Letters, Vol. 112, No. 26, 262407, 25.06.2018.

Research output: Contribution to journal › Article

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abstract = "Co2-xMn1+xSi films with various composition x were epitaxially grown using molecular beam epitaxy (MBE). High crystallinity and atomic ordering in the prepared Co2-xMn1+xSi films were observed, and their magnetic damping and anisotropic magnetoresistance (AMR) effect were systematically investigated. An ultra-low magnetic damping constant of 0.0007 was obtained in the Co2-xMn1+xSi film with a valence electron number (NV) of about 29.0. Additionally, a relatively large negative AMR effect was observed in the Co2-xMn1+xSi films that had a NV of about 29.0. This low damping and the large negative AMR effect indicate that epitaxial Co2-xMn1+xSi films with high atomic ordering grown by MBE possess a high-spin polarization.",

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AU - Fukuda, Kenji

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AU - Ando, Yasuo

AU - Palmstrøm, Chris J.

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