Low magnetic damping and large negative anisotropic magnetoresistance in half-metallic Co2-xMn1+xSi Heusler alloy films grown by molecular beam epitaxy

Mikihiko Oogane, Anthony P. McFadden, Kenji Fukuda, Masakiyo Tsunoda, Yasuo Ando, Chris J. Palmstrøm

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10 Citations (Scopus)

Abstract

Co2-xMn1+xSi films with various composition x were epitaxially grown using molecular beam epitaxy (MBE). High crystallinity and atomic ordering in the prepared Co2-xMn1+xSi films were observed, and their magnetic damping and anisotropic magnetoresistance (AMR) effect were systematically investigated. An ultra-low magnetic damping constant of 0.0007 was obtained in the Co2-xMn1+xSi film with a valence electron number (NV) of about 29.0. Additionally, a relatively large negative AMR effect was observed in the Co2-xMn1+xSi films that had a NV of about 29.0. This low damping and the large negative AMR effect indicate that epitaxial Co2-xMn1+xSi films with high atomic ordering grown by MBE possess a high-spin polarization.

Original languageEnglish
Article number262407
JournalApplied Physics Letters
Volume112
Issue number26
DOIs
Publication statusPublished - 2018 Jun 25

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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