Low-k fluorinated amorphous carbon interlayer technology for quarter micron devices

Y. Matsubara, K. Endo, T. Tatsumi, H. Ueno, K. Sugai, T. Horiuchi

Research output: Contribution to journalConference articlepeer-review

8 Citations (Scopus)


We have developed a new interlayer technology that attain 50% reduction in capacitance and keep good process compatibility with current Chemical Mechanical Polishing (CMP) based multi-level metallization (MLM) process. This technology uses fluorinated amorphous carbon (a-C:F) with a dielectric constant of 2.3, sandwiched between layers of SiO2, which are formed in sequential by high density plasma-chemical vapor deposition (HDP-CVD) technique. Top SiO2 layer assures oxygen plasma resistance during via etching, metal etching, and resist removal.

Original languageEnglish
Pages (from-to)369-372
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1996 Dec 1
Externally publishedYes
EventProceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 1996 Dec 81996 Dec 11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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