Low Interface Trap Density and High Breakdown Electric Field SiN Films on GaN Formed by Plasma Pretreatment Using Microwave-Excited Plasma-Enhanced Chemical Vapor Deposition

Tadashi Watanabe, Akinobu Teramoto, Yukihisa Nakao, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

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Chemical Compounds

Engineering & Materials Science