Low Interface Trap Density and High Breakdown Electric Field SiN Films on GaN Formed by Plasma Pretreatment Using Microwave-Excited Plasma-Enhanced Chemical Vapor Deposition

Tadashi Watanabe, Akinobu Teramoto, Yukihisa Nakao, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

We investigated the SiN/gallium nitride (GaN) interface properties formed by the microwave-excited plasma-enhanced chemical vapor deposition (PECVD) with SiH4/N2/H2 gases. The interface and insulating properties of SiN films on GaN formed by the microwave-excited PECVD strongly depend on SiH4 flow rate. Although the interface trap density is lower than 1011 cm-2eV-1 at the relatively high SiH4 flow rate of 1 sccm, the breakdown electric field is very low (∼ 1 MV/cm). Using the SiH4 plasma pretreatment before the stoichiometric SiN deposition, both low interface trap density and high breakdown voltage greater than 2 MV/cm are obtained. In this case, the clearly ordered Ga bonding near the SiN/GaN interface is estimated by an electron energy loss spectroscopy. The formation of SiN film on GaN using the microwave-excited PECVD is a very useful technique for the high-quality interface properties.

Original languageEnglish
Article number7407623
Pages (from-to)1795-1801
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume63
Issue number4
DOIs
Publication statusPublished - 2016 Apr 1

Keywords

  • Gallium nitride (GaN)
  • MIS capacitors
  • silicon nitride

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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