Low-interface-trap-density and high-breakdown-electric-field SiN films on GaN formed by plasma pretreatment using microwave-excited plasma-enhanced chemical vapor deposition

Tadashi Watanabe, Akinobu Teramoto, Yukihisa Nakao, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

We investigated the SiN/GaN interface properties formed by the microwave-excited plasma-enhanced chemical vapor deposition (PECVD) with SiH4 N2 H2 gases. The interface and insulating properties of SiN films on GaN, formed by the microwave-excited PECVD, strongly depend on SiH4 flow rate. Although the interface trap density is lower than 1011 cm-2eV-1 at the relatively high SiH4 flow rate of 1.0 standard cm3 (sccm), the breakdown electric field is very low (approximately 1 MV/cm). Using the SiH4 plasma pretreatment before the stoichiometric SiN deposition, both low interface trap density and high breakdown voltage greater than 2 MV/cm were obtained. In this case, the clearly ordered Ga bonding near the SiN/GaN interface was estimated by electron energy loss spectroscopy. The formation of SiN film on GaN using the microwave-excited PECVD is a very useful technique for the high-quality interface properties.

Original languageEnglish
Article number6513241
Pages (from-to)1916-1922
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume60
Issue number6
DOIs
Publication statusPublished - 2013 May 29

Keywords

  • Gallium nitride (GaN)
  • MIS capacitors
  • silicon nitride

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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