Low-frequency noise reduction in Si nanowire MOSFETs

K. Ohmori, W. Feng, R. Hettiarachchi, Y. Lee, S. Sato, K. Kakushima, M. Sato, K. Fukuda, M. Niwa, K. Yamabe, K. Shiraishi, K. Iwai, H. Yamada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We have investigated the noise spectral density of nanowire and planar FETs. It was experimentally found that the nanowire FET shows lower noise density than the planar FET. By a simulation using Poisson-Schrödinger equations, the distribution of inversion carriers is located further from the interface due to quantum confinement, which well explains the observed lower noise density of nanowire FET.

Original languageEnglish
Title of host publicationDielectrics for Nanosystems 5
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices
Pages437-442
Number of pages6
Edition3
DOIs
Publication statusPublished - 2012 Nov 19
Event5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting - Seattle, WA, United States
Duration: 2012 May 62012 May 10

Publication series

NameECS Transactions
Number3
Volume45
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting
CountryUnited States
CitySeattle, WA
Period12/5/612/5/10

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Low-frequency noise reduction in Si nanowire MOSFETs'. Together they form a unique fingerprint.

  • Cite this

    Ohmori, K., Feng, W., Hettiarachchi, R., Lee, Y., Sato, S., Kakushima, K., Sato, M., Fukuda, K., Niwa, M., Yamabe, K., Shiraishi, K., Iwai, K., & Yamada, H. (2012). Low-frequency noise reduction in Si nanowire MOSFETs. In Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices (3 ed., pp. 437-442). (ECS Transactions; Vol. 45, No. 3). https://doi.org/10.1149/1.3700909