Low frequency noise in magnetic tunneling junctions with Co40Fe40B20/Co70.5Fe4.5Si15B10 composite free layer

Z. H. Yuan; J. F. Feng; Peng Guo; C. H. Wan; H. X. Wei; S. S. Ali; X. F. Han; T. Nakano; H. Naganuma; Y. Ando

doi:10.1016/j.jmmm.2015.09.026

Low frequency noise in magnetic tunneling junctions with Co₄₀Fe₄₀B₂₀/Co_70.5Fe_4.5Si₁₅B₁₀ composite free layer

Z. H. Yuan, J. F. Feng, Peng Guo, C. H. Wan, H. X. Wei, S. S. Ali, X. F. Han, T. Nakano, H. Naganuma, Y. Ando

ENG - Applied Physics

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Magnetic tunneling junctions with Co₄₀Fe₄₀B₂₀/Co_70.5Fe_4.5Si₁₅B₁₀ composite free layer have been fabricated and annealed at different temperatures to obtain the highest tunneling magnetoresistance. The field and temperature dependences of the low frequency noise have been measured to understand the origin of noise. The random telegraph noise has been observed at low magnetic field, and the corresponding fluctuating moment is estimated to be 4.8×10⁵ μ_B with an effective area of 240 nm². The dependence of noise on temperature was coincident with the thermally activated kinetics model above 30 K while it deviated from this model below 30 K. Studying the origin of the low frequency noise is helpful to reduce the noise level in MTJs.

Original language	English
Pages (from-to)	215-219
Number of pages	5
Journal	Journal of Magnetism and Magnetic Materials
Volume	398
DOIs	https://doi.org/10.1016/j.jmmm.2015.09.026
Publication status	Published - 2016 Jan 15

Keywords

Low frequency noise
Magnetic tunneling junctions
Random telegraph noise
Tunneling magnetoresistance

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1016/j.jmmm.2015.09.026

Cite this

@article{a262face65f34800916e8fbd47d72a26,

title = "Low frequency noise in magnetic tunneling junctions with Co40Fe40B20/Co70.5Fe4.5Si15B10 composite free layer",

abstract = "Magnetic tunneling junctions with Co40Fe40B20/Co70.5Fe4.5Si15B10 composite free layer have been fabricated and annealed at different temperatures to obtain the highest tunneling magnetoresistance. The field and temperature dependences of the low frequency noise have been measured to understand the origin of noise. The random telegraph noise has been observed at low magnetic field, and the corresponding fluctuating moment is estimated to be 4.8×105 μB with an effective area of 240 nm2. The dependence of noise on temperature was coincident with the thermally activated kinetics model above 30 K while it deviated from this model below 30 K. Studying the origin of the low frequency noise is helpful to reduce the noise level in MTJs.",

keywords = "Low frequency noise, Magnetic tunneling junctions, Random telegraph noise, Tunneling magnetoresistance",

author = "Yuan, {Z. H.} and Feng, {J. F.} and Peng Guo and Wan, {C. H.} and Wei, {H. X.} and Ali, {S. S.} and Han, {X. F.} and T. Nakano and H. Naganuma and Y. Ando",

note = "Funding Information: The work was supported by the State Key Project of Fundamental Research of Ministry of Science and Technology [MOST, Nos. 2010CB934401 , 2014AA032904 ], the National Natural Science Foundation of China [NSFC, Grant nos. 11222432 , 11174341 and 51401236 ], and NSFC-JSPS International Joint Research Fund . Publisher Copyright: {\textcopyright} 2015 Elsevier B.V. All rights reserved.",

year = "2016",

month = jan,

day = "15",

doi = "10.1016/j.jmmm.2015.09.026",

language = "English",

volume = "398",

pages = "215--219",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

}

TY - JOUR

T1 - Low frequency noise in magnetic tunneling junctions with Co40Fe40B20/Co70.5Fe4.5Si15B10 composite free layer

AU - Yuan, Z. H.

AU - Feng, J. F.

AU - Guo, Peng

AU - Wan, C. H.

AU - Wei, H. X.

AU - Ali, S. S.

AU - Han, X. F.

AU - Nakano, T.

AU - Naganuma, H.

AU - Ando, Y.

N1 - Funding Information: The work was supported by the State Key Project of Fundamental Research of Ministry of Science and Technology [MOST, Nos. 2010CB934401 , 2014AA032904 ], the National Natural Science Foundation of China [NSFC, Grant nos. 11222432 , 11174341 and 51401236 ], and NSFC-JSPS International Joint Research Fund . Publisher Copyright: © 2015 Elsevier B.V. All rights reserved.

PY - 2016/1/15

Y1 - 2016/1/15

N2 - Magnetic tunneling junctions with Co40Fe40B20/Co70.5Fe4.5Si15B10 composite free layer have been fabricated and annealed at different temperatures to obtain the highest tunneling magnetoresistance. The field and temperature dependences of the low frequency noise have been measured to understand the origin of noise. The random telegraph noise has been observed at low magnetic field, and the corresponding fluctuating moment is estimated to be 4.8×105 μB with an effective area of 240 nm2. The dependence of noise on temperature was coincident with the thermally activated kinetics model above 30 K while it deviated from this model below 30 K. Studying the origin of the low frequency noise is helpful to reduce the noise level in MTJs.

AB - Magnetic tunneling junctions with Co40Fe40B20/Co70.5Fe4.5Si15B10 composite free layer have been fabricated and annealed at different temperatures to obtain the highest tunneling magnetoresistance. The field and temperature dependences of the low frequency noise have been measured to understand the origin of noise. The random telegraph noise has been observed at low magnetic field, and the corresponding fluctuating moment is estimated to be 4.8×105 μB with an effective area of 240 nm2. The dependence of noise on temperature was coincident with the thermally activated kinetics model above 30 K while it deviated from this model below 30 K. Studying the origin of the low frequency noise is helpful to reduce the noise level in MTJs.

KW - Low frequency noise

KW - Magnetic tunneling junctions

KW - Random telegraph noise

KW - Tunneling magnetoresistance

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