@article{d4ba0dfb80694668b36ba4fdd7de0abc,
title = "Low frequency noise in InAlAs/InGaAs modulation doped field effect transistors with 50-nm gate length",
abstract = "We report on the low frequency [1/f and generation-recombination (GR)] noise in InAlAs/InGaAs modulation doped field effect transistors with a 50-nm gate length. The characteristic capture and emission times of the GR noise depended on the gate voltage. Measurements of the noise as a function of the gate voltage showed that the gate leakage current, contacts, and ungated sections of the channel did not contribute to the 1/f noise. The gate voltage dependence of the 1/f noise agreed well with the model of number of carriers fluctuations as a source of the 1/f noise. An effective density of traps responsible for the 1/f noise was found to be Deff ≈2.7× 1012 cm-2 eV-1.",
author = "Levinshtein, {M. E.} and Rumyantsev, {S. L.} and R. Tauk and S. Boubanga and N. Dyakonova and W. Knap and A. Shchepetov and S. Bollaert and Y. Rollens and Shur, {M. S.}",
note = "Funding Information: The work at RPI has been supported by the National Science Foundation under “Connection one” I/UCR center. The work at Ioffe Physico-Technical Institute was supported by Russian Foundation for Basic Research. At RPI and at Ioffe Physico-Technical Institute the work was supported by Civilian Research and Development Foundation (CRDF 2681). At IEMN CNRS UMR 8520 the work was supported by French Ministry of Scientific Researches under ACI “TeraTOP.” The research at GES-UMR 5650 CNRS and University Montpellier2 was supported by “Platforme Technologique THz” of Region Languedoc Roussillon and PICS, GDR 2897, and GDRE 373 CNRS projects related to “Solid State Detectors and Emitters of Terahertz Radiation.” ",
year = "2007",
doi = "10.1063/1.2781087",
language = "English",
volume = "102",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "6",
}