Low frequency noise in InAlAs/InGaAs modulation doped field effect transistors with 50-nm gate length

M. E. Levinshtein, S. L. Rumyantsev, R. Tauk, S. Boubanga, N. Dyakonova, W. Knap, A. Shchepetov, S. Bollaert, Y. Rollens, M. S. Shur

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Abstract

We report on the low frequency [1/f and generation-recombination (GR)] noise in InAlAs/InGaAs modulation doped field effect transistors with a 50-nm gate length. The characteristic capture and emission times of the GR noise depended on the gate voltage. Measurements of the noise as a function of the gate voltage showed that the gate leakage current, contacts, and ungated sections of the channel did not contribute to the 1/f noise. The gate voltage dependence of the 1/f noise agreed well with the model of number of carriers fluctuations as a source of the 1/f noise. An effective density of traps responsible for the 1/f noise was found to be Deff ≈2.7× 1012 cm-2 eV-1.

Original languageEnglish
Article number064506
JournalJournal of Applied Physics
Volume102
Issue number6
DOIs
Publication statusPublished - 2007

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Levinshtein, M. E., Rumyantsev, S. L., Tauk, R., Boubanga, S., Dyakonova, N., Knap, W., Shchepetov, A., Bollaert, S., Rollens, Y., & Shur, M. S. (2007). Low frequency noise in InAlAs/InGaAs modulation doped field effect transistors with 50-nm gate length. Journal of Applied Physics, 102(6), [064506]. https://doi.org/10.1063/1.2781087