Low frequency noise characterization in metal oxide semiconductor field effect transistor based charge transfer device at room and low temperatures

Engineering

• Metal-Oxide-Semiconductor Field-Effect Transistor 66%
• Room Temperature 50%
• Noise Power 33%
• Frequency Noise 33%
• Lower Temperature 33%
• Low Frequency 33%
• Pulse Frequency 16%
• Cryogenic Temperature 16%
• Interface Trap 16%
• Proportionality 16%
• Reduction 16%
• Noise Characterization 16%
• Change of Basis 16%

Chemistry

• Device 50%
• Time 33%
• Ambient Reaction Temperature 33%
• Noise 33%
• Reduction 16%
• Interface Trap 16%
• Number 16%

Physics

• Charge Transfer 100%
• Room Temperature 33%
• Cryogenic Temperature 16%
• Emission 16%
• Significance 16%