Low frequency dielectric properties in a ferromagnetic semiconductor (ED-TTFVO)2FeBr4 with permanent electric dipoles

E. Negishi, S. Yabuta, T. Matsumoto, T. Sugimoto, N. Toyota

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

We have measured the dielectric constant ε1, and conductivity σ1 along the b-axis in a ferromagnetic (T c = 1 K) semiconductor (ED-TTFVO)2FeBr4 with permanent electric dipoles, using a three-terminal capacitance bridge at frequencies from 10 Hz to 2.8 kHz at excitation voltages from 25-250 mV. The temperature dependence of ε1, which is as large as 10 4-105, shows a broad peak at Tp associated with a hump at Th below Tp. These two anomalous temperatures increase with frequency; Tp = 15 K (10 Hz) - 40 K (2.8 kHz) and Th = 8 K (10 Hz) - 17 K (2.8 kHz). Furthermore, ε1, and σ1 exhibit a remarkable non-linearity with the excitation voltage. These characteristic behaviors are reminiscent of a ferroelectric relaxor.

Original languageEnglish
Pages (from-to)125-126
Number of pages2
JournalJournal De Physique. IV : JP
Volume114
DOIs
Publication statusPublished - 2004
EventISCOM 2003: 5th International Symposium on Crystalline Organic Metals, Superconductors and Ferromagnets - Port-Bourgenay, France
Duration: 2003 Sep 212003 Sep 26

Keywords

  • (ED-TTFVO)FeBr
  • Dielectric constant
  • Ferroelectric relaxor
  • Ferromagnetism
  • Molecular electric dipoles
  • π-d system

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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