Low frequency dielectric properties in a ferromagnetic semiconductor (ED-TTFVO)2FeBr4 with permanent electric dipoles

E. Negishi; S. Yabuta; T. Matsumoto; T. Sugimoto; N. Toyota

doi:10.1051/jp4:2004114027

Low frequency dielectric properties in a ferromagnetic semiconductor (ED-TTFVO)₂FeBr₄ with permanent electric dipoles

E. Negishi, S. Yabuta, T. Matsumoto, T. Sugimoto, N. Toyota

SCI - Physics

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

We have measured the dielectric constant ε₁, and conductivity σ₁ along the b-axis in a ferromagnetic (T _c = 1 K) semiconductor (ED-TTFVO)₂FeBr₄ with permanent electric dipoles, using a three-terminal capacitance bridge at frequencies from 10 Hz to 2.8 kHz at excitation voltages from 25-250 mV. The temperature dependence of ε₁, which is as large as 10 ⁴-10⁵, shows a broad peak at T_p associated with a hump at T_h below T_p. These two anomalous temperatures increase with frequency; T_p = 15 K (10 Hz) - 40 K (2.8 kHz) and T_h = 8 K (10 Hz) - 17 K (2.8 kHz). Furthermore, ε₁, and σ₁ exhibit a remarkable non-linearity with the excitation voltage. These characteristic behaviors are reminiscent of a ferroelectric relaxor.

Original language	English
Pages (from-to)	125-126
Number of pages	2
Journal	Journal De Physique. IV : JP
Volume	114
DOIs	https://doi.org/10.1051/jp4:2004114027
Publication status	Published - 2004
Event	ISCOM 2003: 5th International Symposium on Crystalline Organic Metals, Superconductors and Ferromagnets - Port-Bourgenay, France Duration: 2003 Sep 21 → 2003 Sep 26

Keywords

(ED-TTFVO)FeBr
Dielectric constant
Ferroelectric relaxor
Ferromagnetism
Molecular electric dipoles
π-d system

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1051/jp4:2004114027

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@article{577e2aba7d0a4b11b109423f1237b003,

title = "Low frequency dielectric properties in a ferromagnetic semiconductor (ED-TTFVO)2FeBr4 with permanent electric dipoles",

abstract = "We have measured the dielectric constant ε1, and conductivity σ1 along the b-axis in a ferromagnetic (T c = 1 K) semiconductor (ED-TTFVO)2FeBr4 with permanent electric dipoles, using a three-terminal capacitance bridge at frequencies from 10 Hz to 2.8 kHz at excitation voltages from 25-250 mV. The temperature dependence of ε1, which is as large as 10 4-105, shows a broad peak at Tp associated with a hump at Th below Tp. These two anomalous temperatures increase with frequency; Tp = 15 K (10 Hz) - 40 K (2.8 kHz) and Th = 8 K (10 Hz) - 17 K (2.8 kHz). Furthermore, ε1, and σ1 exhibit a remarkable non-linearity with the excitation voltage. These characteristic behaviors are reminiscent of a ferroelectric relaxor.",

keywords = "(ED-TTFVO)FeBr, Dielectric constant, Ferroelectric relaxor, Ferromagnetism, Molecular electric dipoles, π-d system",

author = "E. Negishi and S. Yabuta and T. Matsumoto and T. Sugimoto and N. Toyota",

note = "Copyright: Copyright 2008 Elsevier B.V., All rights reserved.; ISCOM 2003: 5th International Symposium on Crystalline Organic Metals, Superconductors and Ferromagnets ; Conference date: 21-09-2003 Through 26-09-2003",

year = "2004",

doi = "10.1051/jp4:2004114027",

language = "English",

volume = "114",

pages = "125--126",

journal = "European Physical Journal: Special Topics",

issn = "1951-6355",

publisher = "Springer Verlag",

}

TY - JOUR

T1 - Low frequency dielectric properties in a ferromagnetic semiconductor (ED-TTFVO)2FeBr4 with permanent electric dipoles

AU - Negishi, E.

AU - Yabuta, S.

AU - Matsumoto, T.

AU - Sugimoto, T.

AU - Toyota, N.

PY - 2004

Y1 - 2004

N2 - We have measured the dielectric constant ε1, and conductivity σ1 along the b-axis in a ferromagnetic (T c = 1 K) semiconductor (ED-TTFVO)2FeBr4 with permanent electric dipoles, using a three-terminal capacitance bridge at frequencies from 10 Hz to 2.8 kHz at excitation voltages from 25-250 mV. The temperature dependence of ε1, which is as large as 10 4-105, shows a broad peak at Tp associated with a hump at Th below Tp. These two anomalous temperatures increase with frequency; Tp = 15 K (10 Hz) - 40 K (2.8 kHz) and Th = 8 K (10 Hz) - 17 K (2.8 kHz). Furthermore, ε1, and σ1 exhibit a remarkable non-linearity with the excitation voltage. These characteristic behaviors are reminiscent of a ferroelectric relaxor.

AB - We have measured the dielectric constant ε1, and conductivity σ1 along the b-axis in a ferromagnetic (T c = 1 K) semiconductor (ED-TTFVO)2FeBr4 with permanent electric dipoles, using a three-terminal capacitance bridge at frequencies from 10 Hz to 2.8 kHz at excitation voltages from 25-250 mV. The temperature dependence of ε1, which is as large as 10 4-105, shows a broad peak at Tp associated with a hump at Th below Tp. These two anomalous temperatures increase with frequency; Tp = 15 K (10 Hz) - 40 K (2.8 kHz) and Th = 8 K (10 Hz) - 17 K (2.8 kHz). Furthermore, ε1, and σ1 exhibit a remarkable non-linearity with the excitation voltage. These characteristic behaviors are reminiscent of a ferroelectric relaxor.

KW - (ED-TTFVO)FeBr

KW - Dielectric constant

KW - Ferroelectric relaxor

KW - Ferromagnetism

KW - Molecular electric dipoles

KW - π-d system

UR - http://www.scopus.com/inward/record.url?scp=33645164949&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33645164949&partnerID=8YFLogxK

U2 - 10.1051/jp4:2004114027

DO - 10.1051/jp4:2004114027

M3 - Conference article

AN - SCOPUS:33645164949

VL - 114

SP - 125

EP - 126

JO - European Physical Journal: Special Topics

JF - European Physical Journal: Special Topics

SN - 1951-6355

T2 - ISCOM 2003: 5th International Symposium on Crystalline Organic Metals, Superconductors and Ferromagnets

Y2 - 21 September 2003 through 26 September 2003

ER -