Low-frequency capacitance-voltage study of hydrogen interaction with Pt-AlGaN/GaN Schottky barrier diodes

Yoshihiro Irokawa, Nobuyuki Matsuki, Masatomo Sumiya, Yoshiki Sakuma, Takashi Sekiguchi, Toyohiro Chikyo, Yasunobu Sumida, Yoshitaka Nakano

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

We have investigated the interaction of hydrogen with Pt-AlGaN/GaN Schottky barrier diodes (SBDs) using a lowfrequency capacitance-voltage (C-V) technique. At a frequency of 1 kHz, the C-V curve in hydrogen shifts toward negative bias values as compared with that in nitrogen. As the frequency decreases from 1 kHz to 1 Hz, the capacitance in hydrogen significantly increases and an oscillation of the capacitance is observed. These C-V characteristics are quite anomalous and have not been reported yet, suggesting the formation of an interfacial polarization which could be attributable to hydrogen-related dipoles. The oscillation of the capacitance may be related to the alignment of the dipoles.

Original languageEnglish
Pages (from-to)266-268
Number of pages3
JournalPhysica Status Solidi - Rapid Research Letters
Volume3
Issue number7-8
DOIs
Publication statusPublished - 2009 Dec 9
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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