Low field transport properties of two-dimensional electron gas in selectively doped N-AlGaAs/GaInAs/GaAs pseudomorphic structures

Ji Kui Luo; Hideo Ohno; Kinichiro Matsuzaki; Hideki Hasegawa

doi:10.1143/JJAP.27.1831

Low field transport properties of two-dimensional electron gas in selectively doped N-AlGaAs/GaInAs/GaAs pseudomorphic structures

Ji Kui Luo, Hideo Ohno, Kinichiro Matsuzaki, Hideki Hasegawa

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

In order to clarify the low field transport properties of two-dimensional electron gas (2DEG) in selectively doped (SD) AlGaAs/GaInAs/GaAs pseudomorphic structures, electron effective mass as well as electron scattering mechanisms were investigated using molecular beam epitaxially grown SD-Al_0.3Ga_0.7As/Ga_0.87In_0.13As/GaAs structures. Temperature dependence of Shubnikov-de Haas oscillation showed that the effective mass of 2DEG was greater than that of a bulk alloy. Enhancement of the effective mass quantitatively agrees with that expected from the effect of strain and nonparabolicity. The 2DEG mobilities were measured by Hall measurements as a function of carrier concentration, n_s, as well as a function of temperature. At a low temperature range (< 40 K), mobility increased with increasing n_s and saturated at a high n_s region where virtually no temperature dependence was observed. Comparison of the mobility with that of AlGaAs/GaAs heterostructures and the results of the scattering theory revealed that the mobility at low temperatures can be quantitatively explained by the cluster scattering due to compositional nonuniformity in addition to the remote ionized impurity scattering.

Original language	English
Pages (from-to)	1831-1840
Number of pages	10
Journal	Japanese journal of applied physics
Volume	27
Issue number	10 R
DOIs	https://doi.org/10.1143/JJAP.27.1831
Publication status	Published - 1988 Oct
Externally published	Yes

Keywords

Aigaas/GalnAs/GaAs heterostructure
Alloy scattering
Cluster scattering
Effective mass
Field effect transistor
Low field mobility
Molecular beam epitaxy
Shubnikov de Haas
Strain

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.27.1831

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title = "Low field transport properties of two-dimensional electron gas in selectively doped N-AlGaAs/GaInAs/GaAs pseudomorphic structures",

abstract = "In order to clarify the low field transport properties of two-dimensional electron gas (2DEG) in selectively doped (SD) AlGaAs/GaInAs/GaAs pseudomorphic structures, electron effective mass as well as electron scattering mechanisms were investigated using molecular beam epitaxially grown SD-Al0.3Ga0.7As/Ga0.87In0.13As/GaAs structures. Temperature dependence of Shubnikov-de Haas oscillation showed that the effective mass of 2DEG was greater than that of a bulk alloy. Enhancement of the effective mass quantitatively agrees with that expected from the effect of strain and nonparabolicity. The 2DEG mobilities were measured by Hall measurements as a function of carrier concentration, ns, as well as a function of temperature. At a low temperature range (< 40 K), mobility increased with increasing ns and saturated at a high ns region where virtually no temperature dependence was observed. Comparison of the mobility with that of AlGaAs/GaAs heterostructures and the results of the scattering theory revealed that the mobility at low temperatures can be quantitatively explained by the cluster scattering due to compositional nonuniformity in addition to the remote ionized impurity scattering.",

keywords = "Aigaas/GalnAs/GaAs heterostructure, Alloy scattering, Cluster scattering, Effective mass, Field effect transistor, Low field mobility, Molecular beam epitaxy, Shubnikov de Haas, Strain",

author = "Luo, {Ji Kui} and Hideo Ohno and Kinichiro Matsuzaki and Hideki Hasegawa",

year = "1988",

month = oct,

doi = "10.1143/JJAP.27.1831",

language = "English",

volume = "27",

pages = "1831--1840",

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publisher = "Japan Society of Applied Physics",

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T1 - Low field transport properties of two-dimensional electron gas in selectively doped N-AlGaAs/GaInAs/GaAs pseudomorphic structures

AU - Luo, Ji Kui

AU - Ohno, Hideo

AU - Matsuzaki, Kinichiro

AU - Hasegawa, Hideki

PY - 1988/10

Y1 - 1988/10

N2 - In order to clarify the low field transport properties of two-dimensional electron gas (2DEG) in selectively doped (SD) AlGaAs/GaInAs/GaAs pseudomorphic structures, electron effective mass as well as electron scattering mechanisms were investigated using molecular beam epitaxially grown SD-Al0.3Ga0.7As/Ga0.87In0.13As/GaAs structures. Temperature dependence of Shubnikov-de Haas oscillation showed that the effective mass of 2DEG was greater than that of a bulk alloy. Enhancement of the effective mass quantitatively agrees with that expected from the effect of strain and nonparabolicity. The 2DEG mobilities were measured by Hall measurements as a function of carrier concentration, ns, as well as a function of temperature. At a low temperature range (< 40 K), mobility increased with increasing ns and saturated at a high ns region where virtually no temperature dependence was observed. Comparison of the mobility with that of AlGaAs/GaAs heterostructures and the results of the scattering theory revealed that the mobility at low temperatures can be quantitatively explained by the cluster scattering due to compositional nonuniformity in addition to the remote ionized impurity scattering.

AB - In order to clarify the low field transport properties of two-dimensional electron gas (2DEG) in selectively doped (SD) AlGaAs/GaInAs/GaAs pseudomorphic structures, electron effective mass as well as electron scattering mechanisms were investigated using molecular beam epitaxially grown SD-Al0.3Ga0.7As/Ga0.87In0.13As/GaAs structures. Temperature dependence of Shubnikov-de Haas oscillation showed that the effective mass of 2DEG was greater than that of a bulk alloy. Enhancement of the effective mass quantitatively agrees with that expected from the effect of strain and nonparabolicity. The 2DEG mobilities were measured by Hall measurements as a function of carrier concentration, ns, as well as a function of temperature. At a low temperature range (< 40 K), mobility increased with increasing ns and saturated at a high ns region where virtually no temperature dependence was observed. Comparison of the mobility with that of AlGaAs/GaAs heterostructures and the results of the scattering theory revealed that the mobility at low temperatures can be quantitatively explained by the cluster scattering due to compositional nonuniformity in addition to the remote ionized impurity scattering.

KW - Aigaas/GalnAs/GaAs heterostructure

KW - Alloy scattering

KW - Cluster scattering

KW - Effective mass

KW - Field effect transistor

KW - Low field mobility

KW - Molecular beam epitaxy

KW - Shubnikov de Haas

KW - Strain

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ER -

Low field transport properties of two-dimensional electron gas in selectively doped N-AlGaAs/GaInAs/GaAs pseudomorphic structures

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