Low-energy plasma CVD for epitaxy and in-situ doping of group-IV semiconductors in nanoelectronics

Masao Sakuraba, Hisanao Akima, Shigeo Sato

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

In a trend for highly-scaled semiconductor devices and quantumtunneling devices in Si large-scale integrated circuits (LSI), lowertemperature processing for epitaxy and in-situ doping is necessary and has been pursued because suppression of diffusion length is indispensable. We have been developing a low-energy electroncyclotron- resonance (ECR) plasma chemical vapor deposition (CVD) processing and we have enabled epitaxy of Si, Ge, Si-Ge alloy and Si-C alloy on Si (100) without substrate heating. Moreover, we have enabled in-situ doping of the Si epitaxial film without substrate heating and confirmed rectifying characteristics in p-n junction diodes by using the Si-Ge alloy and B-doped Si films. Moreover, p-type B atomic-layer (AL) doping in Si epitaxy without substrate heating was experimentally demonstrated. This AL doping technique is expected to be applicable not only to low-resistive semiconductor film formation but also to two-dimensional impurity-band formation which is far from thermal equilibrium. By using low-energy ECR nitrogen plasma, low-stress Si nitride film formation was also demonstrated by SiH4 reaction and modification of film properties by subsequent plasma nitridation. Therein, monitoring temperature and waiting for heating-up and cooling-down are not necessary. This means that semiconductor device fabrication becomes "smart" in a viewpoint of consuming time, materials, energy and human. Additionally, new concept of crystal structure transformation in Si from the diamond structure into non-diamond structure was suggested to explore novel property creation. Thus, the low-energy ECR plasma CVD processing is expected to contribute to various fields of material science, engineering and physics of nanoelectronic devices.

Original languageEnglish
Title of host publicationChemical Vapor Deposition (CVD)
Subtitle of host publicationTypes, Uses and Selected Research
PublisherNova Science Publishers, Inc.
Pages61-114
Number of pages54
ISBN (Electronic)9781536109085
ISBN (Print)9781536108934
Publication statusPublished - 2017 Jan 1

Keywords

  • Atomic-layer doping
  • B
  • C
  • Chemical vapor deposition
  • Electron-cyclotron-resonance plasma
  • Epitaxy
  • Ge
  • Heterostructure
  • In-situ doping
  • Si
  • Si nitride
  • p-n junction

ASJC Scopus subject areas

  • Chemistry(all)

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