Low energy excitation of Yb4As3

Shin Ichi Kimura; Akira Ochiai; Takashi Suzuki

doi:10.1016/S0921-4526(96)00897-6

Low energy excitation of Yb₄As₃

Shin Ichi Kimura, Akira Ochiai, Takashi Suzuki

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Temperature dependence of electronic structure near the Fermi level of Yb₄As₃ was investigated by the reflectivity measurement. An absorption band with strong temperature dependence was observed around 0.4 eV. The band shifts to the low energy side and becomes broad as the temperature increases. The electronic state which makes the absorption crosses the Fermi level at the temperature of 200 K. The anomalous conducting property is considered to relate to the electronic band.

Original language	English
Pages (from-to)	705-707
Number of pages	3
Journal	Physica B: Condensed Matter
Volume	230-232
DOIs	https://doi.org/10.1016/S0921-4526(96)00897-6
Publication status	Published - 1997 Feb
Externally published	Yes

Keywords

Optical properties
YbAs

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/S0921-4526(96)00897-6

Cite this

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title = "Low energy excitation of Yb4As3",

abstract = "Temperature dependence of electronic structure near the Fermi level of Yb4As3 was investigated by the reflectivity measurement. An absorption band with strong temperature dependence was observed around 0.4 eV. The band shifts to the low energy side and becomes broad as the temperature increases. The electronic state which makes the absorption crosses the Fermi level at the temperature of 200 K. The anomalous conducting property is considered to relate to the electronic band.",

keywords = "Optical properties, YbAs",

author = "Kimura, {Shin Ichi} and Akira Ochiai and Takashi Suzuki",

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T1 - Low energy excitation of Yb4As3

AU - Kimura, Shin Ichi

AU - Ochiai, Akira

AU - Suzuki, Takashi

PY - 1997/2

Y1 - 1997/2

N2 - Temperature dependence of electronic structure near the Fermi level of Yb4As3 was investigated by the reflectivity measurement. An absorption band with strong temperature dependence was observed around 0.4 eV. The band shifts to the low energy side and becomes broad as the temperature increases. The electronic state which makes the absorption crosses the Fermi level at the temperature of 200 K. The anomalous conducting property is considered to relate to the electronic band.

AB - Temperature dependence of electronic structure near the Fermi level of Yb4As3 was investigated by the reflectivity measurement. An absorption band with strong temperature dependence was observed around 0.4 eV. The band shifts to the low energy side and becomes broad as the temperature increases. The electronic state which makes the absorption crosses the Fermi level at the temperature of 200 K. The anomalous conducting property is considered to relate to the electronic band.

KW - Optical properties

KW - YbAs

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DO - 10.1016/S0921-4526(96)00897-6

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AN - SCOPUS:17644434139

SN - 0921-4526

VL - 230-232

SP - 705

EP - 707

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

ER -