Low energy excitation of Yb4As3

Shin Ichi Kimura, Akira Ochiai, Takashi Suzuki

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


Temperature dependence of electronic structure near the Fermi level of Yb4As3 was investigated by the reflectivity measurement. An absorption band with strong temperature dependence was observed around 0.4 eV. The band shifts to the low energy side and becomes broad as the temperature increases. The electronic state which makes the absorption crosses the Fermi level at the temperature of 200 K. The anomalous conducting property is considered to relate to the electronic band.

Original languageEnglish
Pages (from-to)705-707
Number of pages3
JournalPhysica B: Condensed Matter
Publication statusPublished - 1997 Feb
Externally publishedYes


  • Optical properties
  • YbAs

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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