Temperature dependence of electronic structure near the Fermi level of Yb4As3 was investigated by the reflectivity measurement. An absorption band with strong temperature dependence was observed around 0.4 eV. The band shifts to the low energy side and becomes broad as the temperature increases. The electronic state which makes the absorption crosses the Fermi level at the temperature of 200 K. The anomalous conducting property is considered to relate to the electronic band.
- Optical properties
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering