Low energy electron stimulated etching of thin Si oxide layer using STM: Nano-fabrication with a localized low-energy e-beam

Nan Li, Tatsuo Yoshinobu, Hiroshi Iwasaki

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Direct nanofabrication of Si oxide was demonstrated using scanning tunneling microscopy (STM). The direct fabrication of Si oxide with low-energy electron stimulated reaction (LEESR) is possible using STM, including the epitaxial growth of nanostructures after the fabrication. The LEESR/STM method combines a localized low-energy e-beam with STM in which a field emission current up to approximately 1 μA and of 30-160 eV in energy can be extracted from the tip. By exposing this e-beam to a thin Si oxide layer followed with a thermal annealing, surface reactions can be stimulated and then windows can be cut through the oxide layer.

Original languageEnglish
Pages (from-to)488
Number of pages1
JournalShinku/Journal of the Vacuum Society of Japan
Volume42
Issue number3
Publication statusPublished - 1999

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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