Low energy electron stimulated etching of thin Si-oxide layer in nanometer scale using scanning tunneling microscope

Nan Li, Tatsuo Yoshinobu, Hiroshi Iwasaki

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

With a low-energy electron stimulated reaction on Si oxide nanofabrication of thin Si-oxide layers on Si surfaces has been carried out using scanning tunneling microscope (STM). By dosing a very localized low-energy electron beam from the STM tip followed by thermal desorption, nanometer-scale windows of 50 nm on average can be cut through the Si oxide layers with a minimum size of approximately 2.5 nm. With this method, line- and ring-window patterns were successfully formed on the Si oxide layer. E-beam exposure dependence of the window size was observed on the fabricated line windows, which indicates high controllability of the nanofabrication procedure.

Original languageEnglish
Pages (from-to)L252-L254
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume38
Issue number3 A
DOIs
Publication statusPublished - 1999
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Low energy electron stimulated etching of thin Si-oxide layer in nanometer scale using scanning tunneling microscope'. Together they form a unique fingerprint.

  • Cite this