Low driving voltage 40 Gbit/s n-i-n Mach-Zehnder modulator fabricated on InP substrate

Ken Tsuzuki, Tadao Ishibashi, Hiroshi Yasaka, Yuichi Tohmori

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

We have developed a traveling-wave optical modulator using an n-i-n heterostructure fabricated on an InP substrate. The modulation characteristics are studied theoretically and experimentally. We obtained an extremely small π voltage (Vπ) of 2.2 V, even for a short signal-electrode length of 3 mm. We confirmed a wide frequency bandwidth and clearly open eye diagrams at 40 Gbit/s.

Original languageEnglish
Pages (from-to)960-965
Number of pages6
JournalIEICE Transactions on Electronics
VolumeE88-C
Issue number5
DOIs
Publication statusPublished - 2005 Jan 1
Externally publishedYes

Keywords

  • InP
  • Mach-Zehnder
  • Modulator
  • N-i-n
  • Semiconductor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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