Abstract
We have developed a traveling-wave optical modulator using an n-i-n heterostructure fabricated on an InP substrate. The modulation characteristics are studied theoretically and experimentally. We obtained an extremely small π voltage (Vπ) of 2.2 V, even for a short signal-electrode length of 3 mm. We confirmed a wide frequency bandwidth and clearly open eye diagrams at 40 Gbit/s.
Original language | English |
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Pages (from-to) | 960-965 |
Number of pages | 6 |
Journal | IEICE Transactions on Electronics |
Volume | E88-C |
Issue number | 5 |
DOIs | |
Publication status | Published - 2005 Jan 1 |
Externally published | Yes |
Keywords
- InP
- Mach-Zehnder
- Modulator
- N-i-n
- Semiconductor
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering