Low driving voltage 40 Gbit/s n-i-n Mach-Zehnder modulator fabricated on InP substrate

Ken Tsuzuki; Tadao Ishibashi; Hiroshi Yasaka; Yuichi Tohmori

doi:10.1093/ietele/e88-c.5.960

Low driving voltage 40 Gbit/s n-i-n Mach-Zehnder modulator fabricated on InP substrate

Ken Tsuzuki, Tadao Ishibashi, Hiroshi Yasaka, Yuichi Tohmori

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We have developed a traveling-wave optical modulator using an n-i-n heterostructure fabricated on an InP substrate. The modulation characteristics are studied theoretically and experimentally. We obtained an extremely small π voltage (V_π) of 2.2 V, even for a short signal-electrode length of 3 mm. We confirmed a wide frequency bandwidth and clearly open eye diagrams at 40 Gbit/s.

Original language	English
Pages (from-to)	960-965
Number of pages	6
Journal	IEICE Transactions on Electronics
Volume	E88-C
Issue number	5
DOIs	https://doi.org/10.1093/ietele/e88-c.5.960
Publication status	Published - 2005 Jan 1
Externally published	Yes

Keywords

InP
Mach-Zehnder
Modulator
N-i-n
Semiconductor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1093/ietele/e88-c.5.960

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title = "Low driving voltage 40 Gbit/s n-i-n Mach-Zehnder modulator fabricated on InP substrate",

abstract = "We have developed a traveling-wave optical modulator using an n-i-n heterostructure fabricated on an InP substrate. The modulation characteristics are studied theoretically and experimentally. We obtained an extremely small π voltage (Vπ) of 2.2 V, even for a short signal-electrode length of 3 mm. We confirmed a wide frequency bandwidth and clearly open eye diagrams at 40 Gbit/s.",

keywords = "InP, Mach-Zehnder, Modulator, N-i-n, Semiconductor",

author = "Ken Tsuzuki and Tadao Ishibashi and Hiroshi Yasaka and Yuichi Tohmori",

year = "2005",

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doi = "10.1093/ietele/e88-c.5.960",

language = "English",

volume = "E88-C",

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journal = "IEICE Transactions on Electronics",

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T1 - Low driving voltage 40 Gbit/s n-i-n Mach-Zehnder modulator fabricated on InP substrate

AU - Tsuzuki, Ken

AU - Ishibashi, Tadao

AU - Yasaka, Hiroshi

AU - Tohmori, Yuichi

PY - 2005/1/1

Y1 - 2005/1/1

N2 - We have developed a traveling-wave optical modulator using an n-i-n heterostructure fabricated on an InP substrate. The modulation characteristics are studied theoretically and experimentally. We obtained an extremely small π voltage (Vπ) of 2.2 V, even for a short signal-electrode length of 3 mm. We confirmed a wide frequency bandwidth and clearly open eye diagrams at 40 Gbit/s.

AB - We have developed a traveling-wave optical modulator using an n-i-n heterostructure fabricated on an InP substrate. The modulation characteristics are studied theoretically and experimentally. We obtained an extremely small π voltage (Vπ) of 2.2 V, even for a short signal-electrode length of 3 mm. We confirmed a wide frequency bandwidth and clearly open eye diagrams at 40 Gbit/s.

KW - InP

KW - Mach-Zehnder

KW - Modulator

KW - N-i-n

KW - Semiconductor

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UR - http://www.scopus.com/inward/citedby.url?scp=24144467838&partnerID=8YFLogxK

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DO - 10.1093/ietele/e88-c.5.960

M3 - Article

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VL - E88-C

SP - 960

EP - 965

JO - IEICE Transactions on Electronics

JF - IEICE Transactions on Electronics

SN - 0916-8524

IS - 5

ER -

Low driving voltage 40 Gbit/s n-i-n Mach-Zehnder modulator fabricated on InP substrate

Abstract

Keywords

ASJC Scopus subject areas

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