TY - GEN
T1 - Low driving-voltage 40-Gbit/s electroabsorption modulator integrated DFB laser module with low chirp characteristics
AU - Fukano, Hideki
AU - Akage, Yuichi
AU - Kawaguchi, Yoshihiro
AU - Suzaki, Yasumasa
AU - Kishi, Kenji
AU - Yamanaka, Takayuki
AU - Kondo, Yasuhiro
AU - Yasaka, Hiroshi
PY - 2006/1/1
Y1 - 2006/1/1
N2 - We demonstrated successful 3-km transmission using a 40-Gbit/s EA-DFB laser module with driving voltage as low as 2 V. The installed EA-DFB chip has an optimized device structure which is operatable under low chirp condition.
AB - We demonstrated successful 3-km transmission using a 40-Gbit/s EA-DFB laser module with driving voltage as low as 2 V. The installed EA-DFB chip has an optimized device structure which is operatable under low chirp condition.
UR - http://www.scopus.com/inward/record.url?scp=41549088003&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=41549088003&partnerID=8YFLogxK
U2 - 10.1109/islc.2006.1708061
DO - 10.1109/islc.2006.1708061
M3 - Conference contribution
AN - SCOPUS:41549088003
SN - 0780395603
SN - 9780780395602
T3 - Conference Digest - IEEE International Semiconductor Laser Conference
SP - 11
EP - 12
BT - 2006 IEEE 20th International Semiconductor Laser Conference, ISLC - Conference Digest
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2006 IEEE 20th International Semiconductor Laser Conference, ISLC
Y2 - 17 September 2006 through 21 September 2006
ER -