TY - JOUR
T1 - Low-dielectric-constant nonporous fluorocarbon films for interlayer dielectric
AU - Itoh, Azumi
AU - Inokuchi, Atsutoshi
AU - Yasuda, Seiji
AU - Teramoto, Akinobu
AU - Goto, Tetsuya
AU - Hirayama, Masaki
AU - Ohmi, Tadahiro
PY - 2008/4/25
Y1 - 2008/4/25
N2 - Low-dielectric-constant (k < 2.0) nonporous fluorocarbon films are formed using a new microwave-excited low electron temperature and high-density plasma system with a dual-shower-plate structure. In the new system, the material gas (C5F8) is supplied by a lower shower plate inserted in the diffusion plasma region of very low electron temperature (around 1-2 eV). An upper shower plate is used for supplying the plasma excitation gas in a uniform downflow in the chamber. Since such a gas flow pattern can prevent the penetration of the material gas into the plasma excitation region, the overdecomposition of the material gas can be markedly suppressed as compared with that in the case of using conventional plasma systems such as an electron cyclotron resonance (ECR) plasma source. As a result, fluorocarbon films can be formed by maximizing the original characteristics of material gases. The fluorocarbon films formed using the new system have not only low k but also low leakage current density, sufficient mechanical strength, strong adhesion, high heat resistance and good surface smoothness. Therefore, such films can be used in interlayer dielectrics in ultralarge-scale integration (ULSI) devices.
AB - Low-dielectric-constant (k < 2.0) nonporous fluorocarbon films are formed using a new microwave-excited low electron temperature and high-density plasma system with a dual-shower-plate structure. In the new system, the material gas (C5F8) is supplied by a lower shower plate inserted in the diffusion plasma region of very low electron temperature (around 1-2 eV). An upper shower plate is used for supplying the plasma excitation gas in a uniform downflow in the chamber. Since such a gas flow pattern can prevent the penetration of the material gas into the plasma excitation region, the overdecomposition of the material gas can be markedly suppressed as compared with that in the case of using conventional plasma systems such as an electron cyclotron resonance (ECR) plasma source. As a result, fluorocarbon films can be formed by maximizing the original characteristics of material gases. The fluorocarbon films formed using the new system have not only low k but also low leakage current density, sufficient mechanical strength, strong adhesion, high heat resistance and good surface smoothness. Therefore, such films can be used in interlayer dielectrics in ultralarge-scale integration (ULSI) devices.
KW - Chemical vapor deposition (CVD)
KW - Fluorocarbon film
KW - Interlayer dielectric
KW - Low dielectric constant
KW - Microwave-excited plasma
KW - Nonporous
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U2 - 10.1143/JJAP.47.2515
DO - 10.1143/JJAP.47.2515
M3 - Article
AN - SCOPUS:54249141053
VL - 47
SP - 2515
EP - 2520
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 PART 2
ER -