Low-dielectric-constant nonporous fluorocarbon films for interlayer dielectric

Azumi Itoh, Atsutoshi Inokuchi, Seiji Yasuda, Akinobu Teramoto, Tetsuya Goto, Masaki Hirayama, Tadahiro Ohmi

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Low-dielectric-constant (k < 2.0) nonporous fluorocarbon films are formed using a new microwave-excited low electron temperature and high-density plasma system with a dual-shower-plate structure. In the new system, the material gas (C5F8) is supplied by a lower shower plate inserted in the diffusion plasma region of very low electron temperature (around 1-2 eV). An upper shower plate is used for supplying the plasma excitation gas in a uniform downflow in the chamber. Since such a gas flow pattern can prevent the penetration of the material gas into the plasma excitation region, the overdecomposition of the material gas can be markedly suppressed as compared with that in the case of using conventional plasma systems such as an electron cyclotron resonance (ECR) plasma source. As a result, fluorocarbon films can be formed by maximizing the original characteristics of material gases. The fluorocarbon films formed using the new system have not only low k but also low leakage current density, sufficient mechanical strength, strong adhesion, high heat resistance and good surface smoothness. Therefore, such films can be used in interlayer dielectrics in ultralarge-scale integration (ULSI) devices.

Original languageEnglish
Pages (from-to)2515-2520
Number of pages6
JournalJapanese journal of applied physics
Volume47
Issue number4 PART 2
DOIs
Publication statusPublished - 2008 Apr 25

Keywords

  • Chemical vapor deposition (CVD)
  • Fluorocarbon film
  • Interlayer dielectric
  • Low dielectric constant
  • Microwave-excited plasma
  • Nonporous

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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