Low-current perpendicular domain wall motion cell for scalable high-speed MRAM

S. Fukami; T. Suzuki; K. Nagahara; N. Ohshima; Y. Ozaki; S. Saito; R. Nebashi; N. Sakimura; H. Honjo; K. Mori; C. Igarashi; S. Miura; N. Ishiwata; T. Sugibayashi

Low-current perpendicular domain wall motion cell for scalable high-speed MRAM

S. Fukami, T. Suzuki, K. Nagahara, N. Ohshima, Y. Ozaki, S. Saito, R. Nebashi, N. Sakimura, H. Honjo, K. Mori, C. Igarashi, S. Miura, N. Ishiwata, T. Sugibayashi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

188 Citations (Scopus)

Abstract

We have developed a new magnetic random access memory with current-induced domain wall (DW) motion (DW-motion MRAM). We confirmed its potential of 0.1-mA and 2-ns writing with sufficient thermal stability. The obtained properties indicate that this MRAM can replace conventional high-speed embedded memories.

Original language	English
Title of host publication	2009 Symposium on VLSI Technology, VLSIT 2009
Pages	230-231
Number of pages	2
Publication status	Published - 2009 Nov 16
Externally published	Yes
Event	2009 Symposium on VLSI Technology, VLSIT 2009 - Kyoto, Japan Duration: 2009 Jun 16 → 2009 Jun 18

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)	0743-1562

Other

Other	2009 Symposium on VLSI Technology, VLSIT 2009
Country/Territory	Japan
City	Kyoto
Period	09/6/16 → 09/6/18

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

Fukami, S., Suzuki, T., Nagahara, K., Ohshima, N., Ozaki, Y., Saito, S., Nebashi, R., Sakimura, N., Honjo, H., Mori, K., Igarashi, C., Miura, S., Ishiwata, N., & Sugibayashi, T. (2009). Low-current perpendicular domain wall motion cell for scalable high-speed MRAM. In 2009 Symposium on VLSI Technology, VLSIT 2009 (pp. 230-231). [5200610] (Digest of Technical Papers - Symposium on VLSI Technology).

Fukami, S, Suzuki, T, Nagahara, K, Ohshima, N, Ozaki, Y, Saito, S, Nebashi, R, Sakimura, N, Honjo, H, Mori, K, Igarashi, C, Miura, S, Ishiwata, N & Sugibayashi, T 2009, Low-current perpendicular domain wall motion cell for scalable high-speed MRAM. in 2009 Symposium on VLSI Technology, VLSIT 2009., 5200610, Digest of Technical Papers - Symposium on VLSI Technology, pp. 230-231, 2009 Symposium on VLSI Technology, VLSIT 2009, Kyoto, Japan, 09/6/16.

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abstract = "We have developed a new magnetic random access memory with current-induced domain wall (DW) motion (DW-motion MRAM). We confirmed its potential of 0.1-mA and 2-ns writing with sufficient thermal stability. The obtained properties indicate that this MRAM can replace conventional high-speed embedded memories.",

author = "S. Fukami and T. Suzuki and K. Nagahara and N. Ohshima and Y. Ozaki and S. Saito and R. Nebashi and N. Sakimura and H. Honjo and K. Mori and C. Igarashi and S. Miura and N. Ishiwata and T. Sugibayashi",

year = "2009",

month = nov,

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language = "English",

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series = "Digest of Technical Papers - Symposium on VLSI Technology",

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AU - Fukami, S.

AU - Suzuki, T.

AU - Nagahara, K.

AU - Ohshima, N.

AU - Ozaki, Y.

AU - Saito, S.

AU - Nebashi, R.

AU - Sakimura, N.

AU - Honjo, H.

AU - Mori, K.

AU - Igarashi, C.

AU - Miura, S.

AU - Ishiwata, N.

AU - Sugibayashi, T.

PY - 2009/11/16

Y1 - 2009/11/16

N2 - We have developed a new magnetic random access memory with current-induced domain wall (DW) motion (DW-motion MRAM). We confirmed its potential of 0.1-mA and 2-ns writing with sufficient thermal stability. The obtained properties indicate that this MRAM can replace conventional high-speed embedded memories.

AB - We have developed a new magnetic random access memory with current-induced domain wall (DW) motion (DW-motion MRAM). We confirmed its potential of 0.1-mA and 2-ns writing with sufficient thermal stability. The obtained properties indicate that this MRAM can replace conventional high-speed embedded memories.

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M3 - Conference contribution

AN - SCOPUS:71049160813

SN - 9784863480094

T3 - Digest of Technical Papers - Symposium on VLSI Technology

SP - 230

EP - 231

BT - 2009 Symposium on VLSI Technology, VLSIT 2009

T2 - 2009 Symposium on VLSI Technology, VLSIT 2009

Y2 - 16 June 2009 through 18 June 2009

ER -

Low-current perpendicular domain wall motion cell for scalable high-speed MRAM

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