Low-current perpendicular domain wall motion cell for scalable high-speed MRAM

S. Fukami, T. Suzuki, K. Nagahara, N. Ohshima, Y. Ozaki, S. Saito, R. Nebashi, N. Sakimura, H. Honjo, K. Mori, C. Igarashi, S. Miura, N. Ishiwata, T. Sugibayashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

172 Citations (Scopus)

Abstract

We have developed a new magnetic random access memory with current-induced domain wall (DW) motion (DW-motion MRAM). We confirmed its potential of 0.1-mA and 2-ns writing with sufficient thermal stability. The obtained properties indicate that this MRAM can replace conventional high-speed embedded memories.

Original languageEnglish
Title of host publication2009 Symposium on VLSI Technology, VLSIT 2009
Pages230-231
Number of pages2
Publication statusPublished - 2009 Nov 16
Externally publishedYes
Event2009 Symposium on VLSI Technology, VLSIT 2009 - Kyoto, Japan
Duration: 2009 Jun 162009 Jun 18

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Other

Other2009 Symposium on VLSI Technology, VLSIT 2009
CountryJapan
CityKyoto
Period09/6/1609/6/18

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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