TY - GEN
T1 - Low-current perpendicular domain wall motion cell for scalable high-speed MRAM
AU - Fukami, S.
AU - Suzuki, T.
AU - Nagahara, K.
AU - Ohshima, N.
AU - Ozaki, Y.
AU - Saito, S.
AU - Nebashi, R.
AU - Sakimura, N.
AU - Honjo, H.
AU - Mori, K.
AU - Igarashi, C.
AU - Miura, S.
AU - Ishiwata, N.
AU - Sugibayashi, T.
PY - 2009/11/16
Y1 - 2009/11/16
N2 - We have developed a new magnetic random access memory with current-induced domain wall (DW) motion (DW-motion MRAM). We confirmed its potential of 0.1-mA and 2-ns writing with sufficient thermal stability. The obtained properties indicate that this MRAM can replace conventional high-speed embedded memories.
AB - We have developed a new magnetic random access memory with current-induced domain wall (DW) motion (DW-motion MRAM). We confirmed its potential of 0.1-mA and 2-ns writing with sufficient thermal stability. The obtained properties indicate that this MRAM can replace conventional high-speed embedded memories.
UR - http://www.scopus.com/inward/record.url?scp=71049160813&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=71049160813&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:71049160813
SN - 9784863480094
T3 - Digest of Technical Papers - Symposium on VLSI Technology
SP - 230
EP - 231
BT - 2009 Symposium on VLSI Technology, VLSIT 2009
T2 - 2009 Symposium on VLSI Technology, VLSIT 2009
Y2 - 16 June 2009 through 18 June 2009
ER -