Low-current domain wall motion MRAM with perpendicularly magnetized CoFeB/MgO magnetic tunnel junction and underlying hard magnets

T. Suzuki, H. Tanigawa, Y. Kobayashi, K. Mori, Y. Ito, Y. Ozaki, K. Suemitsu, T. Kitamura, K. Nagahara, E. Kariyada, N. Ohshima, S. Fukami, Michihiko Yamanouchi, S. Ikeda, M. Hayashi, M. Sakao, H. Ohno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Citations (Scopus)

Abstract

We have developed magnetic domain wall (DW) motion cells with a perpendicularly magnetized CoFeB free layer and underlying hard magnets. Low current writing operation of 0.16 mA and a high MR ratio of 80% were attained for the 130-nm-wide free layer. Write/read operation for a 16kb array and high endurance features were also confirmed.

Original languageEnglish
Title of host publication2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers
PagesT138-T139
Publication statusPublished - 2013 Sep 9
Event2013 Symposium on VLSI Technology, VLSIT 2013 - Kyoto, Japan
Duration: 2013 Jun 112013 Jun 13

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Other

Other2013 Symposium on VLSI Technology, VLSIT 2013
CountryJapan
CityKyoto
Period13/6/1113/6/13

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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