TY - JOUR
T1 - Low-cost Xe sputtering of amorphous In-Ga-Zn-O thin-film transistors by rotation magnet sputtering incorporating a Xe recycle-and-supply system
AU - Goto, Tetsuya
AU - Ishii, Hidekazu
AU - Sugawa, Shigetoshi
AU - Ohmi, Tadahiro
N1 - Funding Information:
This work was partially supported by a JSPS Grant-in-Aid for Young Scientists (B), Grant No. 24760248.
Publisher Copyright:
© 2014 American Vacuum Society.
PY - 2014/3/1
Y1 - 2014/3/1
N2 - A Xe recycle-and-supply system was incorporated into a dual-target rotation magnet sputtering (DT-RMS) process to fabricate amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs). DT-RMS is an upgraded version of the previously reported single-target rotation magnet sputtering system [Goto et al., J. Vac. Sci. Technol. A 27, 653 (2009)] designed to expand deposition area. In DT-RMS, multiple moving plasma loops are excited at the dual-target surface. These plasma loops work to homogenize the properties of the films deposited on the substrates, with time-averaged homogenization of the plasma parameters at the substrate. As a result, film thicknesses and uniform distributions of the a-IGZO-film properties were obtained at an appropriate target-substrate distance. In this configuration, the Xe-sputtered a-IGZO TFTs exhibited higher field-effect mobilities than conventional Ar-sputtered TFTs. When using the recycled Xe supplied from the Xe recycle-and-supply system, the field-effect mobility value was the same as for fresh-Xe sputtered TFTs, demonstrating the technique's potential as a low-cost alternative for providing the flat panel display industry with Xe.
AB - A Xe recycle-and-supply system was incorporated into a dual-target rotation magnet sputtering (DT-RMS) process to fabricate amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs). DT-RMS is an upgraded version of the previously reported single-target rotation magnet sputtering system [Goto et al., J. Vac. Sci. Technol. A 27, 653 (2009)] designed to expand deposition area. In DT-RMS, multiple moving plasma loops are excited at the dual-target surface. These plasma loops work to homogenize the properties of the films deposited on the substrates, with time-averaged homogenization of the plasma parameters at the substrate. As a result, film thicknesses and uniform distributions of the a-IGZO-film properties were obtained at an appropriate target-substrate distance. In this configuration, the Xe-sputtered a-IGZO TFTs exhibited higher field-effect mobilities than conventional Ar-sputtered TFTs. When using the recycled Xe supplied from the Xe recycle-and-supply system, the field-effect mobility value was the same as for fresh-Xe sputtered TFTs, demonstrating the technique's potential as a low-cost alternative for providing the flat panel display industry with Xe.
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U2 - 10.1116/1.4835775
DO - 10.1116/1.4835775
M3 - Article
AN - SCOPUS:85026620758
VL - 32
JO - Journal of Vacuum Science and Technology A
JF - Journal of Vacuum Science and Technology A
SN - 0734-2101
IS - 2
M1 - 02B105
ER -