Low actuation voltage capacitive shunt RF-MEMS switch having a corrugated bridge

Yo Tak Song, Hai Young Lee, Masayoshi Esashi

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

This paper presents the design, fabrication and characterization of a low actuation voltage capacitive shunt RF-MEMS switch for microwave and millimeter-wave applications based on a corrugated electrostatic actuated bridge suspended over a concave structure of coplanar waveguide (CPW), with sputtered nickel as the structural material for the bridge and gold for CPW line, fabricated on high-resistivity silicon (HRS) substrate using IC compatible processes for modular integration in a communication devices. The residual stress is very low because having both ends corrugated structure of the bridge in concave structure. The residual stress is calculated about 3-15 MPa in corrugated bridge and 30 MPa in flat bridge. The corrugated bridge of the concave structure requires lower actuation voltages 20-80 V than 50-100 V of the flat bridge of the planar structure in 0.3 to 1.0 μm thick Ni capacitive shunt RF-MEMS switch, in insertion loss 1.0 dB, return loss 12 dB, power loss 10 dB and isolation 28 dB from 0.5 up to 40 GHz. The residual stress of the bridge material and structure is critical to lower the actuation voltage.

Original languageEnglish
Pages (from-to)1880-1887
Number of pages8
JournalIEICE Transactions on Electronics
VolumeE89-C
Issue number12
DOIs
Publication statusPublished - 2006 Dec

Keywords

  • Capacitive shunt switch
  • Corrugated bridge
  • Low-actuation voltage
  • Microwave and millimeter-wave
  • RF-MEMS
  • Residual stress

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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