In this letter, we investigated the mechanism that forms thin silicon and germanium oxide films with a high-quality interface using a low-temperature neutral beam oxidation (NBO) process. Because NBO has high reactivity due to bombardment by energetic oxygen-neutral beams even at low substrate temperatures, we found that an extremely low activation energy for the atomic layer oxidation reaction could be achieved during the process itself. As a result, there was little suboxide at the interface between the oxide films and the semiconductor, and device characteristics with a high performance were observed.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)