Low activation energy, high-quality oxidation of Si and Ge using neutral beam

Akira Wada, Kazuhiko Endo, Meishoku Masahara, Chi Hsien Huang, Seiji Samukawa

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

In this letter, we investigated the mechanism that forms thin silicon and germanium oxide films with a high-quality interface using a low-temperature neutral beam oxidation (NBO) process. Because NBO has high reactivity due to bombardment by energetic oxygen-neutral beams even at low substrate temperatures, we found that an extremely low activation energy for the atomic layer oxidation reaction could be achieved during the process itself. As a result, there was little suboxide at the interface between the oxide films and the semiconductor, and device characteristics with a high performance were observed.

Original languageEnglish
Article number203111
JournalApplied Physics Letters
Volume98
Issue number20
DOIs
Publication statusPublished - 2011 May 16

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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