Low ACPR characteristics for WCDMA applications of SiGe:C HBT devices with small emitter capacitance

Masao Kondo, Isao Miyashita, Tadashi Kuramaoto, Makoto Koshimizu, Katsuyoshi Washio

Research output: Contribution to journalArticlepeer-review

Abstract

We present C-doped SiGe (SiGe:C) heterojunction bipolar transistor (HBT) devices that exhibit highly efficient and linear power characteristics comparable to those of GaAs HBTs under wide-band code-division multiple-access (WCDMA) modulation. Our devices have a novel resistor inserted in their base bias current pass, which is designed to short-circuits DC components of the base current and conducts only envelope frequency signals. The impurity concentration at their emitter-base junctions is reduced by the effect of C doping suppressing B diffusion, and the emitter capacitance is decreased to half that of conventional SiGe HBTs as the result. The combination of these two modifications has significantly reduced the adjacent channel power leakage ratio (ACPR), and the idle current, without degrading power-added-efficiency (PAE). An optimized device with a total emitter area of 3390 μm2 exhibited 48% PAE and 27.4-dBm output power with an ACPR of less than -40 dBc at an idle current of 20 mA under WCDMA modulation at 1.95 GHz and 3.4-V bias voltage.

Original languageEnglish
Pages (from-to)455-464
Number of pages10
JournalIEICE Transactions on Electronics
VolumeE89-C
Issue number4
DOIs
Publication statusPublished - 2006 Apr
Externally publishedYes

Keywords

  • ACPR
  • Bipolar transistor
  • PAE
  • Power amplifier
  • SiGe HBT
  • SiGe:C

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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