Longitudinal resistance anomaly around the 2/3 filling factor observed in a GaAs/AlGaAs single heterostructure

K. Hashimoto, K. Muraki, T. Saku, Y. Hirayama

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

A pronounced Rxx enhancement near ν = 2/3 is observed in a back-gated GaAs/AlGaAs single heterostructure when the magnetic field for ν = 2/3 (B2/3) is set less than 6 T using the back gate, but it almost vanishes for B2/3 > 8 T. This tendency is consistent with a model in which the mixed state consisting of two different spin domains plays an important role for the anomalous Rxx enhancement. By taking advantage of the back-gated operation, we find a quick recovery of the Rxx enhancement in spite of prior electron depletion, and the long relaxation time of the Rxx enhancement. These results support the argument that the Rxx enhancement is not memorized by the electron system but by the alternative system such as the nuclear spin configuration leading to a long relaxation time.

Original languageEnglish
Pages (from-to)191-194
Number of pages4
JournalPhysica B: Condensed Matter
Volume298
Issue number1-4
DOIs
Publication statusPublished - 2001 Apr 1
Externally publishedYes

Keywords

  • Back-gated GaAs/AlGaAs single heterostructure
  • Fractional quantum Hall effect
  • Longitudinal resistance
  • Nuclear spin

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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