Longitudinal resistance anomaly around the 2/3 filling factor observed in a GaAs/AlGaAs single heterostructure

K. Hashimoto; K. Muraki; T. Saku; Y. Hirayama

doi:10.1016/S0921-4526(01)00299-X

Longitudinal resistance anomaly around the 2/3 filling factor observed in a GaAs/AlGaAs single heterostructure

K. Hashimoto, K. Muraki, T. Saku, Y. Hirayama

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

A pronounced R_xx enhancement near ν = 2/3 is observed in a back-gated GaAs/AlGaAs single heterostructure when the magnetic field for ν = 2/3 (B_2/3) is set less than 6 T using the back gate, but it almost vanishes for B_2/3 > 8 T. This tendency is consistent with a model in which the mixed state consisting of two different spin domains plays an important role for the anomalous R_xx enhancement. By taking advantage of the back-gated operation, we find a quick recovery of the R_xx enhancement in spite of prior electron depletion, and the long relaxation time of the R_xx enhancement. These results support the argument that the R_xx enhancement is not memorized by the electron system but by the alternative system such as the nuclear spin configuration leading to a long relaxation time.

Original language	English
Pages (from-to)	191-194
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	298
Issue number	1-4
DOIs	https://doi.org/10.1016/S0921-4526(01)00299-X
Publication status	Published - 2001 Apr 1
Externally published	Yes

Keywords

Back-gated GaAs/AlGaAs single heterostructure
Fractional quantum Hall effect
Longitudinal resistance
Nuclear spin

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Longitudinal resistance anomaly around the 2/3 filling factor observed in a GaAs/AlGaAs single heterostructure",

abstract = "A pronounced Rxx enhancement near ν = 2/3 is observed in a back-gated GaAs/AlGaAs single heterostructure when the magnetic field for ν = 2/3 (B2/3) is set less than 6 T using the back gate, but it almost vanishes for B2/3 > 8 T. This tendency is consistent with a model in which the mixed state consisting of two different spin domains plays an important role for the anomalous Rxx enhancement. By taking advantage of the back-gated operation, we find a quick recovery of the Rxx enhancement in spite of prior electron depletion, and the long relaxation time of the Rxx enhancement. These results support the argument that the Rxx enhancement is not memorized by the electron system but by the alternative system such as the nuclear spin configuration leading to a long relaxation time.",

keywords = "Back-gated GaAs/AlGaAs single heterostructure, Fractional quantum Hall effect, Longitudinal resistance, Nuclear spin",

author = "K. Hashimoto and K. Muraki and T. Saku and Y. Hirayama",

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T1 - Longitudinal resistance anomaly around the 2/3 filling factor observed in a GaAs/AlGaAs single heterostructure

AU - Hashimoto, K.

AU - Muraki, K.

AU - Saku, T.

AU - Hirayama, Y.

PY - 2001/4/1

Y1 - 2001/4/1

N2 - A pronounced Rxx enhancement near ν = 2/3 is observed in a back-gated GaAs/AlGaAs single heterostructure when the magnetic field for ν = 2/3 (B2/3) is set less than 6 T using the back gate, but it almost vanishes for B2/3 > 8 T. This tendency is consistent with a model in which the mixed state consisting of two different spin domains plays an important role for the anomalous Rxx enhancement. By taking advantage of the back-gated operation, we find a quick recovery of the Rxx enhancement in spite of prior electron depletion, and the long relaxation time of the Rxx enhancement. These results support the argument that the Rxx enhancement is not memorized by the electron system but by the alternative system such as the nuclear spin configuration leading to a long relaxation time.

AB - A pronounced Rxx enhancement near ν = 2/3 is observed in a back-gated GaAs/AlGaAs single heterostructure when the magnetic field for ν = 2/3 (B2/3) is set less than 6 T using the back gate, but it almost vanishes for B2/3 > 8 T. This tendency is consistent with a model in which the mixed state consisting of two different spin domains plays an important role for the anomalous Rxx enhancement. By taking advantage of the back-gated operation, we find a quick recovery of the Rxx enhancement in spite of prior electron depletion, and the long relaxation time of the Rxx enhancement. These results support the argument that the Rxx enhancement is not memorized by the electron system but by the alternative system such as the nuclear spin configuration leading to a long relaxation time.

KW - Back-gated GaAs/AlGaAs single heterostructure

KW - Fractional quantum Hall effect

KW - Longitudinal resistance

KW - Nuclear spin

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