TY - JOUR
T1 - Longitudinal resistance anomaly around the 2/3 filling factor observed in a GaAs/AlGaAs single heterostructure
AU - Hashimoto, K.
AU - Muraki, K.
AU - Saku, T.
AU - Hirayama, Y.
N1 - Funding Information:
The authors acknowledge T. Fujisawa and S. Miyashita for their supports in experiments and sample preparation. The authors also wish to thank G. Austing for the critical reading of the manuscript. This work is partly supported by NEDO NTDP-98 program.
Copyright:
Copyright 2007 Elsevier B.V., All rights reserved.
PY - 2001/4
Y1 - 2001/4
N2 - A pronounced Rxx enhancement near ν = 2/3 is observed in a back-gated GaAs/AlGaAs single heterostructure when the magnetic field for ν = 2/3 (B2/3) is set less than 6 T using the back gate, but it almost vanishes for B2/3 > 8 T. This tendency is consistent with a model in which the mixed state consisting of two different spin domains plays an important role for the anomalous Rxx enhancement. By taking advantage of the back-gated operation, we find a quick recovery of the Rxx enhancement in spite of prior electron depletion, and the long relaxation time of the Rxx enhancement. These results support the argument that the Rxx enhancement is not memorized by the electron system but by the alternative system such as the nuclear spin configuration leading to a long relaxation time.
AB - A pronounced Rxx enhancement near ν = 2/3 is observed in a back-gated GaAs/AlGaAs single heterostructure when the magnetic field for ν = 2/3 (B2/3) is set less than 6 T using the back gate, but it almost vanishes for B2/3 > 8 T. This tendency is consistent with a model in which the mixed state consisting of two different spin domains plays an important role for the anomalous Rxx enhancement. By taking advantage of the back-gated operation, we find a quick recovery of the Rxx enhancement in spite of prior electron depletion, and the long relaxation time of the Rxx enhancement. These results support the argument that the Rxx enhancement is not memorized by the electron system but by the alternative system such as the nuclear spin configuration leading to a long relaxation time.
KW - Back-gated GaAs/AlGaAs single heterostructure
KW - Fractional quantum Hall effect
KW - Longitudinal resistance
KW - Nuclear spin
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U2 - 10.1016/S0921-4526(01)00299-X
DO - 10.1016/S0921-4526(01)00299-X
M3 - Article
AN - SCOPUS:0035304580
VL - 298
SP - 191
EP - 194
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
SN - 0921-4526
IS - 1-4
ER -