Long term retention characteristic of small inverted dots formed on congruent single-crystal LiTaO3

Yasuo Cho; Nozomi Odagawa

doi:10.1557/proc-0966-t11-21

Long term retention characteristic of small inverted dots formed on congruent single-crystal LiTaO₃

Yasuo Cho, Nozomi Odagawa

Information Devices Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

To investigate the long-term retention characteristics of a ferroelectric-data-storage system, 80-nm-thick congruent LiTaO₃ plates with inverted-domain dot arrays composed of 100-nm- Φ dots were baked at 220, 250, 280 and 300°C. After heat treatment over a range of different time intervals, the dots shrank. From the change in the dot radius data, the activation energy (Ea) and frequency factor (a), parameters of the Arrhenius equation, were determined to be = 0.76 eV, = 2.21×10⁵. From these parameter we can predict competitive retention characteristics compared with general memory devices. The phenomenon of dot shrinking can be explained from the energy transition of the system based on wall energy.

Original language	English
Title of host publication	Ferroelectrics and Multiferroics
Publisher	Materials Research Society
Pages	90-95
Number of pages	6
ISBN (Print)	9781604234183
DOIs	https://doi.org/10.1557/proc-0966-t11-21
Publication status	Published - 2006 Jan 1
Event	2006 MRS Fall Meeting - Boston, MA, United States Duration: 2006 Nov 27 → 2006 Nov 29

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	966
ISSN (Print)	0272-9172

Other

Other	2006 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	06/11/27 → 06/11/29

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1557/proc-0966-t11-21

Cite this

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title = "Long term retention characteristic of small inverted dots formed on congruent single-crystal LiTaO3",

abstract = "To investigate the long-term retention characteristics of a ferroelectric-data-storage system, 80-nm-thick congruent LiTaO3 plates with inverted-domain dot arrays composed of 100-nm- Φ dots were baked at 220, 250, 280 and 300°C. After heat treatment over a range of different time intervals, the dots shrank. From the change in the dot radius data, the activation energy (Ea) and frequency factor (a), parameters of the Arrhenius equation, were determined to be = 0.76 eV, = 2.21×105. From these parameter we can predict competitive retention characteristics compared with general memory devices. The phenomenon of dot shrinking can be explained from the energy transition of the system based on wall energy.",

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doi = "10.1557/proc-0966-t11-21",

language = "English",

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series = "Materials Research Society Symposium Proceedings",

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AU - Odagawa, Nozomi

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N2 - To investigate the long-term retention characteristics of a ferroelectric-data-storage system, 80-nm-thick congruent LiTaO3 plates with inverted-domain dot arrays composed of 100-nm- Φ dots were baked at 220, 250, 280 and 300°C. After heat treatment over a range of different time intervals, the dots shrank. From the change in the dot radius data, the activation energy (Ea) and frequency factor (a), parameters of the Arrhenius equation, were determined to be = 0.76 eV, = 2.21×105. From these parameter we can predict competitive retention characteristics compared with general memory devices. The phenomenon of dot shrinking can be explained from the energy transition of the system based on wall energy.

AB - To investigate the long-term retention characteristics of a ferroelectric-data-storage system, 80-nm-thick congruent LiTaO3 plates with inverted-domain dot arrays composed of 100-nm- Φ dots were baked at 220, 250, 280 and 300°C. After heat treatment over a range of different time intervals, the dots shrank. From the change in the dot radius data, the activation energy (Ea) and frequency factor (a), parameters of the Arrhenius equation, were determined to be = 0.76 eV, = 2.21×105. From these parameter we can predict competitive retention characteristics compared with general memory devices. The phenomenon of dot shrinking can be explained from the energy transition of the system based on wall energy.

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