TY - GEN
T1 - Long term retention characteristic of small inverted dots formed on congruent single-crystal LiTaO3
AU - Cho, Yasuo
AU - Odagawa, Nozomi
PY - 2006/1/1
Y1 - 2006/1/1
N2 - To investigate the long-term retention characteristics of a ferroelectric-data-storage system, 80-nm-thick congruent LiTaO3 plates with inverted-domain dot arrays composed of 100-nm- Φ dots were baked at 220, 250, 280 and 300°C. After heat treatment over a range of different time intervals, the dots shrank. From the change in the dot radius data, the activation energy (Ea) and frequency factor (a), parameters of the Arrhenius equation, were determined to be = 0.76 eV, = 2.21×105. From these parameter we can predict competitive retention characteristics compared with general memory devices. The phenomenon of dot shrinking can be explained from the energy transition of the system based on wall energy.
AB - To investigate the long-term retention characteristics of a ferroelectric-data-storage system, 80-nm-thick congruent LiTaO3 plates with inverted-domain dot arrays composed of 100-nm- Φ dots were baked at 220, 250, 280 and 300°C. After heat treatment over a range of different time intervals, the dots shrank. From the change in the dot radius data, the activation energy (Ea) and frequency factor (a), parameters of the Arrhenius equation, were determined to be = 0.76 eV, = 2.21×105. From these parameter we can predict competitive retention characteristics compared with general memory devices. The phenomenon of dot shrinking can be explained from the energy transition of the system based on wall energy.
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U2 - 10.1557/proc-0966-t11-21
DO - 10.1557/proc-0966-t11-21
M3 - Conference contribution
AN - SCOPUS:41049089096
SN - 9781604234183
T3 - Materials Research Society Symposium Proceedings
SP - 90
EP - 95
BT - Ferroelectrics and Multiferroics
PB - Materials Research Society
T2 - 2006 MRS Fall Meeting
Y2 - 27 November 2006 through 29 November 2006
ER -