Logic gates based on electrically driven nanoelectromechanical switches

Research output: Contribution to journalLetterpeer-review

1 Citation (Scopus)

Abstract

This letter reports the design, fabrication, and evaluation of logic gates including NAND and NOR gates which are composed of electrically driven nanoelectromechanical (NEM) switches. These logic gates are formed by four NEM switches consisting of four cantilevers, two input ports, two source ports, and an output. Devices are successfully fabricated by a combination of electron beam lithography, deep reactive ion etching (RIE), and selective tungsten (W) chemical vapor deposition. Truth tables of NAND and NOR are examined and demonstrated.

Original languageEnglish
Pages (from-to)335-336
Number of pages2
JournalIEEJ Transactions on Electrical and Electronic Engineering
Volume14
Issue number2
DOIs
Publication statusPublished - 2019 Feb 1

Keywords

  • NAND
  • NOR
  • logic gates
  • nanomechanical switches

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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