Logic gates based on electrically driven nanoelectromechanical switches

Nguyen Van Toan; Dong Zhao; Naoki Inomata; Takahito Ono

doi:10.1002/tee.22814

Logic gates based on electrically driven nanoelectromechanical switches

Nguyen Van Toan, Dong Zhao, Naoki Inomata, Takahito Ono

ENG - Mechanical Systems Engineering

Research output: Contribution to journal › Letter › peer-review

2 Citations (Scopus)

Abstract

This letter reports the design, fabrication, and evaluation of logic gates including NAND and NOR gates which are composed of electrically driven nanoelectromechanical (NEM) switches. These logic gates are formed by four NEM switches consisting of four cantilevers, two input ports, two source ports, and an output. Devices are successfully fabricated by a combination of electron beam lithography, deep reactive ion etching (RIE), and selective tungsten (W) chemical vapor deposition. Truth tables of NAND and NOR are examined and demonstrated.

Original language	English
Pages (from-to)	335-336
Number of pages	2
Journal	IEEJ Transactions on Electrical and Electronic Engineering
Volume	14
Issue number	2
DOIs	https://doi.org/10.1002/tee.22814
Publication status	Published - 2019 Feb 1

Keywords

NAND
NOR
logic gates
nanomechanical switches

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1002/tee.22814

Cite this

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title = "Logic gates based on electrically driven nanoelectromechanical switches",

abstract = "This letter reports the design, fabrication, and evaluation of logic gates including NAND and NOR gates which are composed of electrically driven nanoelectromechanical (NEM) switches. These logic gates are formed by four NEM switches consisting of four cantilevers, two input ports, two source ports, and an output. Devices are successfully fabricated by a combination of electron beam lithography, deep reactive ion etching (RIE), and selective tungsten (W) chemical vapor deposition. Truth tables of NAND and NOR are examined and demonstrated.",

keywords = "NAND, NOR, logic gates, nanomechanical switches",

author = "{Van Toan}, Nguyen and Dong Zhao and Naoki Inomata and Takahito Ono",

note = "Publisher Copyright: {\textcopyright} 2018 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.",

year = "2019",

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TY - JOUR

T1 - Logic gates based on electrically driven nanoelectromechanical switches

AU - Van Toan, Nguyen

AU - Zhao, Dong

AU - Inomata, Naoki

AU - Ono, Takahito

PY - 2019/2/1

Y1 - 2019/2/1

N2 - This letter reports the design, fabrication, and evaluation of logic gates including NAND and NOR gates which are composed of electrically driven nanoelectromechanical (NEM) switches. These logic gates are formed by four NEM switches consisting of four cantilevers, two input ports, two source ports, and an output. Devices are successfully fabricated by a combination of electron beam lithography, deep reactive ion etching (RIE), and selective tungsten (W) chemical vapor deposition. Truth tables of NAND and NOR are examined and demonstrated.

AB - This letter reports the design, fabrication, and evaluation of logic gates including NAND and NOR gates which are composed of electrically driven nanoelectromechanical (NEM) switches. These logic gates are formed by four NEM switches consisting of four cantilevers, two input ports, two source ports, and an output. Devices are successfully fabricated by a combination of electron beam lithography, deep reactive ion etching (RIE), and selective tungsten (W) chemical vapor deposition. Truth tables of NAND and NOR are examined and demonstrated.

KW - NAND

KW - NOR

KW - logic gates

KW - nanomechanical switches

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JO - IEEJ Transactions on Electrical and Electronic Engineering

JF - IEEJ Transactions on Electrical and Electronic Engineering

IS - 2

ER -

Logic gates based on electrically driven nanoelectromechanical switches

Abstract

Keywords

ASJC Scopus subject areas

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