Logic gate threshold voltage controllable single metal gate FinFET CMOS inverters implemented by using co-integration of 3T/4T-FinFETs

Y. X. Liu, T. Sekigawa, T. Hayashida, T. Matsukawa, K. Endo, S. O'Uchi, K. Sakamoto, K. Ishii, T. Tsukada, Y. Ishikawa, H. Yamauchi, A. Ogura, H. Koike, E. Suzuki, M. Masahara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)
Original languageEnglish
Title of host publication2008 IEEE International SOI Conference Proceedings
Pages161-162
Number of pages2
DOIs
Publication statusPublished - 2008 Dec 24
Externally publishedYes
Event2008 IEEE International SOI Conference - New Paltz, NY, United States
Duration: 2008 Oct 62008 Oct 9

Publication series

NameProceedings - IEEE International SOI Conference
ISSN (Print)1078-621X

Other

Other2008 IEEE International SOI Conference
CountryUnited States
CityNew Paltz, NY
Period08/10/608/10/9

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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