LOGARITHMIC ENHANCEMENT OF LOW TEMPERATURE ELECTRICAL RESISTIVITY AT HIGH MAGNETIC FIELDS IN Nb-Ti ALLOYS.

T. Sasaki, Naoki Toyota, Y. Muto

Research output: Contribution to conferencePaperpeer-review

Abstract

The low temperature electrical resistivity rho (T) of five Nb-Ti alloys, Nb//2//1 Ti//7//9, Nb//3//4 Ti//6//6, Nb//4//8 Ti//5//2, Nb//6//3 Ti//3//7 and Nb//9//1 Ti//9, in magnetic fields up to 20. 6 T has been investigated. At 20. 6 T a slight but definite enhancement of rho (T) with logarithmic temperature dependence is observed in all the samples except Nb//9//1 Ti//9 below a temperature T//m where rho (T) takes a minimum. The enhancement appears remarkably in Ti-rich alloys. These samples exhibit positive magnetorsistance which tends to saturate as the field increases.

Original languageEnglish
Pages438-440
Number of pages3
Publication statusPublished - 1985 Jan 1

ASJC Scopus subject areas

  • Engineering(all)

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