LOGARITHMIC ENHANCEMENT OF LOW TEMPERATURE ELECTRICAL RESISTIVITY AT HIGH MAGNETIC FIELDS IN Nb-Ti ALLOYS.

The low temperature electrical resistivity rho (T) of five Nb-Ti alloys, Nb//2//1 Ti//7//9, Nb//3//4 Ti//6//6, Nb//4//8 Ti//5//2, Nb//6//3 Ti//3//7 and Nb//9//1 Ti//9, in magnetic fields up to 20. 6 T has been investigated. At 20. 6 T a slight but definite enhancement of rho (T) with logarithmic temperature dependence is observed in all the samples except Nb//9//1 Ti//9 below a temperature T//m where rho (T) takes a minimum. The enhancement appears remarkably in Ti-rich alloys. These samples exhibit positive magnetorsistance which tends to saturate as the field increases.