Locally induced stress in stacked ultrathin Si wafers: XPS and μ-Raman study

M. Murugesan, H. Nohira, H. Kobayashi, T. Fukushima, T. Tanaka, M. Koyanagi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Induced local stress arising from local deformation of top silicon die in the vertically stacked LSI die has been investigated via x-ray photoelectron spectroscopy (XPS) and micro-Raman spectroscopy (μRS). The large positive shift in the core level Si-2s and Si-2p XP spectra for the thinned die revealed that thinned dies were under heavy stress/strain even before stacking. The core level binding energy shift, ΔEb for Si-1s core level and the relative chemical shift ΔEr for Si in the vertically integrated die system showed that the stacked Si dies were under different stresses in the μ-bump and the bump-space regions. It was also inferred from the μRS results that the stacked 10 μm-thick-Si dies were under large tensile strain of >1.5 GPa and a relatively small compressive stress of ∼0.5 GPa in the μ-bump and bump-space region, respectively.

Original languageEnglish
Title of host publication2012 IEEE 62nd Electronic Components and Technology Conference, ECTC 2012
Pages625-629
Number of pages5
DOIs
Publication statusPublished - 2012 Oct 4
Event2012 IEEE 62nd Electronic Components and Technology Conference, ECTC 2012 - San Diego, CA, United States
Duration: 2012 May 292012 Jun 1

Publication series

NameProceedings - Electronic Components and Technology Conference
ISSN (Print)0569-5503

Other

Other2012 IEEE 62nd Electronic Components and Technology Conference, ECTC 2012
CountryUnited States
CitySan Diego, CA
Period12/5/2912/6/1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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