Local transport properties of ferromagnetic tunnel junctions

Y. Ando, M. Hayashi, M. Kamijo, H. Kubota, T. Miyazaki

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

The local electrical properties were measured simultaneously with the topography for a SiO2/Ta(3nm)/ Fe20Ni80(3nm)/. Pt(20nm)/Fe20Ni80(3nm.)/IrMn(10nm)/Co75Fe25(4nm)/Al(0.8nm. )-oxide junction. The current image became very homogeneous and smooth after annealing at around 300°C for 1 h. Increase of tunneling magnetoresistance ratio of the junction after annealing can be well explained by taking into account both increase of the barrier height and decrease of the barrier height variation. After further annealing over 3 50 C, the barrier height decreased and leak currents were detected. Reduction of spin polarization of the ferromagnetic electrodes due to interface mixing or damage of the insulator due to the growth of grains of bottom electrode is a possible reason for the drastic decrease of TMR ratio for annealing at temperatures higher than 350°C.

Original languageEnglish
Pages (from-to)924-925
Number of pages2
JournalJournal of Magnetism and Magnetic Materials
Volume226-230
Issue numberPART I
DOIs
Publication statusPublished - 2001

Keywords

  • Atomic force microscopy
  • Insulators
  • Transport properties
  • Tunneling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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