Local structure investigations of Sn and Mn doped in β-Ga2O3 by X-ray absorption spectroscopy

H. Arima-Osonoi; K. Yamazaki; R. Simura; T. Sugawara; Kunio Yubuta; K. Sugiyama; A. Yoshiasa

doi:10.1016/j.jcrysgro.2021.126223

Local structure investigations of Sn and Mn doped in β-Ga₂O₃ by X-ray absorption spectroscopy

H. Arima-Osonoi, K. Yamazaki, R. Simura, T. Sugawara, Kunio Yubuta, K. Sugiyama, A. Yoshiasa

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Sn-doped and Mn-doped β-Ga₂O₃ single crystals were grown by the floating zone method using SnO and MnCO₃·nH₂O as the dopant sources, respectively. We have succeeded in investigating the local structural features of Sn and Mn doped in β-Ga₂O₃ by X–ray absorption fine structure (XAFS) analysis. The XAFS analyses indicated the preference of Sn⁴⁺ at the octahedral sites in the β-Ga₂O₃ structure. On the other hand, the site preference for Mn is more complex, with most of the Mn present as Mn²⁺ substituting for Ga at the tetrahedral site. Further investigations using other spectroscopic techniques will be useful to clarify the effect and environmental structure of Mn.

Original language	English
Article number	126223
Journal	Journal of Crystal Growth
Volume	570
DOIs	https://doi.org/10.1016/j.jcrysgro.2021.126223
Publication status	Published - 2021 Sep 15

Keywords

A1. XAFS, A1. Dopant, A1. Crystal structure
A2. Floating zone technique
B1. Gallium oxides
B2. Semiconducting materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jcrysgro.2021.126223

Cite this

@article{fd463f556ec243ca879b9d7dc0cc3e76,

title = "Local structure investigations of Sn and Mn doped in β-Ga2O3 by X-ray absorption spectroscopy",

abstract = "Sn-doped and Mn-doped β-Ga2O3 single crystals were grown by the floating zone method using SnO and MnCO3·nH2O as the dopant sources, respectively. We have succeeded in investigating the local structural features of Sn and Mn doped in β-Ga2O3 by X–ray absorption fine structure (XAFS) analysis. The XAFS analyses indicated the preference of Sn4+ at the octahedral sites in the β-Ga2O3 structure. On the other hand, the site preference for Mn is more complex, with most of the Mn present as Mn2+ substituting for Ga at the tetrahedral site. Further investigations using other spectroscopic techniques will be useful to clarify the effect and environmental structure of Mn.",

keywords = "A1. XAFS, A1. Dopant, A1. Crystal structure, A2. Floating zone technique, B1. Gallium oxides, B2. Semiconducting materials",

author = "H. Arima-Osonoi and K. Yamazaki and R. Simura and T. Sugawara and Kunio Yubuta and K. Sugiyama and A. Yoshiasa",

note = "Funding Information: The XAFS measurements were carried out with the approval of the Photon Factory Program Advisory Committee (Proposal Nos. 2014G535 and 2019G087). This research was partially supported by JSPS KAKENHI Grant Numbers JP18H05456 and JP20H00189. Publisher Copyright: {\textcopyright} 2021 Elsevier B.V.",

year = "2021",

month = sep,

day = "15",

doi = "10.1016/j.jcrysgro.2021.126223",

language = "English",

volume = "570",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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TY - JOUR

T1 - Local structure investigations of Sn and Mn doped in β-Ga2O3 by X-ray absorption spectroscopy

AU - Arima-Osonoi, H.

AU - Yamazaki, K.

AU - Simura, R.

AU - Sugawara, T.

AU - Yubuta, Kunio

AU - Sugiyama, K.

AU - Yoshiasa, A.

N1 - Funding Information: The XAFS measurements were carried out with the approval of the Photon Factory Program Advisory Committee (Proposal Nos. 2014G535 and 2019G087). This research was partially supported by JSPS KAKENHI Grant Numbers JP18H05456 and JP20H00189. Publisher Copyright: © 2021 Elsevier B.V.

PY - 2021/9/15

Y1 - 2021/9/15

N2 - Sn-doped and Mn-doped β-Ga2O3 single crystals were grown by the floating zone method using SnO and MnCO3·nH2O as the dopant sources, respectively. We have succeeded in investigating the local structural features of Sn and Mn doped in β-Ga2O3 by X–ray absorption fine structure (XAFS) analysis. The XAFS analyses indicated the preference of Sn4+ at the octahedral sites in the β-Ga2O3 structure. On the other hand, the site preference for Mn is more complex, with most of the Mn present as Mn2+ substituting for Ga at the tetrahedral site. Further investigations using other spectroscopic techniques will be useful to clarify the effect and environmental structure of Mn.

AB - Sn-doped and Mn-doped β-Ga2O3 single crystals were grown by the floating zone method using SnO and MnCO3·nH2O as the dopant sources, respectively. We have succeeded in investigating the local structural features of Sn and Mn doped in β-Ga2O3 by X–ray absorption fine structure (XAFS) analysis. The XAFS analyses indicated the preference of Sn4+ at the octahedral sites in the β-Ga2O3 structure. On the other hand, the site preference for Mn is more complex, with most of the Mn present as Mn2+ substituting for Ga at the tetrahedral site. Further investigations using other spectroscopic techniques will be useful to clarify the effect and environmental structure of Mn.

KW - A1. XAFS, A1. Dopant, A1. Crystal structure

KW - A2. Floating zone technique

KW - B1. Gallium oxides

KW - B2. Semiconducting materials

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