Local structure investigations of Sn and Mn doped in β-Ga2O3 by X-ray absorption spectroscopy

H. Arima-Osonoi, K. Yamazaki, R. Simura, T. Sugawara, K. Yubuta, K. Sugiyama, A. Yoshiasa

Research output: Contribution to journalArticlepeer-review

Abstract

Sn-doped and Mn-doped β-Ga2O3 single crystals were grown by the floating zone method using SnO and MnCO3·nH2O as the dopant sources, respectively. We have succeeded in investigating the local structural features of Sn and Mn doped in β-Ga2O3 by X–ray absorption fine structure (XAFS) analysis. The XAFS analyses indicated the preference of Sn4+ at the octahedral sites in the β-Ga2O3 structure. On the other hand, the site preference for Mn is more complex, with most of the Mn present as Mn2+ substituting for Ga at the tetrahedral site. Further investigations using other spectroscopic techniques will be useful to clarify the effect and environmental structure of Mn.

Original languageEnglish
Article number126223
JournalJournal of Crystal Growth
Volume570
DOIs
Publication statusPublished - 2021 Sep 15
Externally publishedYes

Keywords

  • A1. XAFS, A1. Dopant, A1. Crystal structure
  • A2. Floating zone technique
  • B1. Gallium oxides
  • B2. Semiconducting materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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