Local structure around Mn atoms in IV-VI ferromagnetic semiconductor Ge0.6Mn0.4Te investigated by X-ray fluorescence holography

Naohisa Happo, Yuki Takehara, Makoto Fujiwara, Koichi Tanaka, Shinya Senba, Shinya Hosokawa, Kouichi Hayashi, Wen Hu, Motohiro Suzuki, Hironori Asada

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Abstract

The local atomic structure around Mn atoms in Ge1-xMn xTe thin-film single crystal has been investigated by X-ray fluorescence holography (XFH) at room temperature. The obtained atomic image suggests that the Mn atoms replace the Ge atoms in the host GeTe, and the Mn position is stable in the exact positions of the anion fcc sublattice. The XFH result also suggests the fluctuation of the Ge positions or the cation vacancies.

Original languageEnglish
Article number05FC11
JournalJapanese journal of applied physics
Volume50
Issue number5 PART 3
DOIs
Publication statusPublished - 2011 May 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Happo, N., Takehara, Y., Fujiwara, M., Tanaka, K., Senba, S., Hosokawa, S., Hayashi, K., Hu, W., Suzuki, M., & Asada, H. (2011). Local structure around Mn atoms in IV-VI ferromagnetic semiconductor Ge0.6Mn0.4Te investigated by X-ray fluorescence holography. Japanese journal of applied physics, 50(5 PART 3), [05FC11]. https://doi.org/10.1143/JJAP.50.05FC11