Local structure around in atoms in coherently grown m-plane InGaN film

Takafumi Miyanaga, Takashi Azuhata, Kiyofumi Nitta, Shigefusa Chichibu

Research output: Contribution to journalArticlepeer-review

Abstract

The local structure around In atoms in an m-plane In0.06Ga0.94N film coherently grown on a freestanding m-plane GaN substrate was investigated by polarization-dependent X-ray absorption fine-structure. A step-by-step fitting procedure was proposed for the m-plane wurtzite structure. The interatomic distance for the first nearest neighbour In - N atomic pairs was almost isotropic. For the second nearest In - Ga pairs, the interatomic distances along the m- and a-axes were longer and shorter, respectively, than that in strain-free virtual crystals as expected for the m-plane compressive strain. In contrast, the In - Ga interatomic distance in the c-direction was elongated in spite of the compressive strain, which was explained in terms of the anisotropic atomic structure on the m-plane. The local strain in the m-plane film was more relaxed than that in coherently grown c-plane single quantum wells. A few In atoms were atomically localized in all directions, and thus localized excitonic emission is expected as in the case of c-plane InGaN.The local structure around In atoms in an m-plane In0.06Ga0.94N film coherently grown on a freestanding m-plane GaN substrate was investigated by polarization-dependent XAFS measurements. A step-by-step fitting procedure was proposed for the m-plane wurtzite structure.

Original languageEnglish
Pages (from-to)1012-1016
Number of pages5
JournalJournal of Synchrotron Radiation
Volume24
Issue number5
DOIs
Publication statusPublished - 2017 Sep 1

Keywords

  • InGaN
  • XAFS
  • local structure
  • m-plane
  • step-by-step fitting procedure

ASJC Scopus subject areas

  • Radiation
  • Nuclear and High Energy Physics
  • Instrumentation

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