Local structure around Ge atoms in IV-VI ferromagnetic semiconductor Ge0.6Mn0.4Te by x-ray fluorescence holography

Naohisa Happo, Yuki Takehara, Makoto Fujiwara, Koichi Tanaka, Shinya Senba, Shinya Hosokawa, Kouichi Hayashi, Wen Hu, Motohiro Suzuki, Hironori Asada

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Local atomic structure around Ge atoms in Ge1-xMnxTe thin film single crystal has been investigated by X-ray fluorescence holography (XFH) at room temperature. Obtained atomic image suggests that the Ge position is not stable at the exact positions of fcc cation sublattice, and reveal the uctuations of Ge positions and/or the existence of cation vacancies.

Original languageEnglish
Pages (from-to)247-250
Number of pages4
Journale-Journal of Surface Science and Nanotechnology
Volume9
DOIs
Publication statusPublished - 2011 Jun 18

Keywords

  • And reflection
  • Diffraction
  • Fluctuation
  • Magnetic films
  • Molecular beam epitaxy
  • Semiconducting Films
  • X-ray scattering

ASJC Scopus subject areas

  • Biotechnology
  • Bioengineering
  • Condensed Matter Physics
  • Mechanics of Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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