Local strain relaxation in Czochralski-grown GeSi bulk alloys

I. Yonenaga; M. Sakurai; M. Nonaka; T. Ayuzawa; M. H.F. Sluiter; Y. Kawazoe

doi:10.1016/j.physb.2003.09.228

Local strain relaxation in Czochralski-grown GeSi bulk alloys

I. Yonenaga, M. Sakurai, M. Nonaka, T. Ayuzawa, M. H.F. Sluiter, Y. Kawazoe

Research output: Contribution to journal › Conference article › peer-review

16 Citations (Scopus)

Abstract

The local atomic structure in GeSi alloys was studied experimentally and theoretically. By extended X-ray absorption fine structure measurements in Czochralski-grown Ge_1-xSi_x bulk alloys, it is found that the Ge-Ge, Ge-Si (Si-Ge) and Si-Si bond lengths maintain distinctly different lengths and vary in a linear fashion as a function of alloy composition across the entire composition range 0<x<1, in good agreement with what is expected from the ab inito electronic structure calculations. It is known that both bond lengths and bond angles are distorted with alloy composition in GeSi.

Original language	English
Pages (from-to)	854-857
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	340-342
DOIs	https://doi.org/10.1016/j.physb.2003.09.228
Publication status	Published - 2003 Dec 31
Event	Proceedings of the 22nd International Conference on Defects in (ICDS-22) - Aarhus, Denmark Duration: 2003 Jul 28 → 2003 Aug 1

Keywords

Atomic structure
Crystal growth
Germanium-silicon
Silicon-germanium
Strain relaxation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.physb.2003.09.228

Cite this

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title = "Local strain relaxation in Czochralski-grown GeSi bulk alloys",

abstract = "The local atomic structure in GeSi alloys was studied experimentally and theoretically. By extended X-ray absorption fine structure measurements in Czochralski-grown Ge1-xSix bulk alloys, it is found that the Ge-Ge, Ge-Si (Si-Ge) and Si-Si bond lengths maintain distinctly different lengths and vary in a linear fashion as a function of alloy composition across the entire composition range 0",

keywords = "Atomic structure, Crystal growth, Germanium-silicon, Silicon-germanium, Strain relaxation",

author = "I. Yonenaga and M. Sakurai and M. Nonaka and T. Ayuzawa and Sluiter, {M. H.F.} and Y. Kawazoe",

note = "Funding Information: This work was partially supported by JSPS Grants-in Aid (No. 13450001).; Proceedings of the 22nd International Conference on Defects in (ICDS-22) ; Conference date: 28-07-2003 Through 01-08-2003",

year = "2003",

month = dec,

day = "31",

doi = "10.1016/j.physb.2003.09.228",

language = "English",

volume = "340-342",

pages = "854--857",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

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TY - JOUR

T1 - Local strain relaxation in Czochralski-grown GeSi bulk alloys

AU - Yonenaga, I.

AU - Sakurai, M.

AU - Nonaka, M.

AU - Ayuzawa, T.

AU - Sluiter, M. H.F.

AU - Kawazoe, Y.

N1 - Funding Information: This work was partially supported by JSPS Grants-in Aid (No. 13450001).

PY - 2003/12/31

Y1 - 2003/12/31

N2 - The local atomic structure in GeSi alloys was studied experimentally and theoretically. By extended X-ray absorption fine structure measurements in Czochralski-grown Ge1-xSix bulk alloys, it is found that the Ge-Ge, Ge-Si (Si-Ge) and Si-Si bond lengths maintain distinctly different lengths and vary in a linear fashion as a function of alloy composition across the entire composition range 0

AB - The local atomic structure in GeSi alloys was studied experimentally and theoretically. By extended X-ray absorption fine structure measurements in Czochralski-grown Ge1-xSix bulk alloys, it is found that the Ge-Ge, Ge-Si (Si-Ge) and Si-Si bond lengths maintain distinctly different lengths and vary in a linear fashion as a function of alloy composition across the entire composition range 0

KW - Atomic structure

KW - Crystal growth

KW - Germanium-silicon

KW - Silicon-germanium

KW - Strain relaxation

UR - http://www.scopus.com/inward/record.url?scp=5544286378&partnerID=8YFLogxK

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U2 - 10.1016/j.physb.2003.09.228

DO - 10.1016/j.physb.2003.09.228

M3 - Conference article

AN - SCOPUS:5544286378

VL - 340-342

SP - 854

EP - 857

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

T2 - Proceedings of the 22nd International Conference on Defects in (ICDS-22)

Y2 - 28 July 2003 through 1 August 2003

ER -

Local strain relaxation in Czochralski-grown GeSi bulk alloys

Abstract

Keywords

ASJC Scopus subject areas

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