Abstract
The local atomic structure in GeSi alloys was studied experimentally and theoretically. By extended X-ray absorption fine structure measurements in Czochralski-grown Ge1-xSix bulk alloys, it is found that the Ge-Ge, Ge-Si (Si-Ge) and Si-Si bond lengths maintain distinctly different lengths and vary in a linear fashion as a function of alloy composition across the entire composition range 0<x<1, in good agreement with what is expected from the ab inito electronic structure calculations. It is known that both bond lengths and bond angles are distorted with alloy composition in GeSi.
Original language | English |
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Pages (from-to) | 854-857 |
Number of pages | 4 |
Journal | Physica B: Condensed Matter |
Volume | 340-342 |
DOIs | |
Publication status | Published - 2003 Dec 31 |
Event | Proceedings of the 22nd International Conference on Defects in (ICDS-22) - Aarhus, Denmark Duration: 2003 Jul 28 → 2003 Aug 1 |
Keywords
- Atomic structure
- Crystal growth
- Germanium-silicon
- Silicon-germanium
- Strain relaxation
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering