Local strain relaxation in Czochralski-grown GeSi bulk alloys

I. Yonenaga, M. Sakurai, M. Nonaka, T. Ayuzawa, M. H.F. Sluiter, Y. Kawazoe

Research output: Contribution to journalConference articlepeer-review

16 Citations (Scopus)

Abstract

The local atomic structure in GeSi alloys was studied experimentally and theoretically. By extended X-ray absorption fine structure measurements in Czochralski-grown Ge1-xSix bulk alloys, it is found that the Ge-Ge, Ge-Si (Si-Ge) and Si-Si bond lengths maintain distinctly different lengths and vary in a linear fashion as a function of alloy composition across the entire composition range 0<x<1, in good agreement with what is expected from the ab inito electronic structure calculations. It is known that both bond lengths and bond angles are distorted with alloy composition in GeSi.

Original languageEnglish
Pages (from-to)854-857
Number of pages4
JournalPhysica B: Condensed Matter
Volume340-342
DOIs
Publication statusPublished - 2003 Dec 31
EventProceedings of the 22nd International Conference on Defects in (ICDS-22) - Aarhus, Denmark
Duration: 2003 Jul 282003 Aug 1

Keywords

  • Atomic structure
  • Crystal growth
  • Germanium-silicon
  • Silicon-germanium
  • Strain relaxation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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