Local magnetoresistance through Si and its bias voltage dependence in ferromagnet/MgO/silicon-on-insulator lateral spin valves

Y. Saito, T. Tanamoto, M. Ishikawa, H. Sugiyama, T. Inokuchi, K. Hamaya, N. Tezuka

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

Local magnetoresistance (MR) through silicon (Si) and its bias voltage (Vbias) (bias current (Ibias)) dependence in ferromagnet (FM)/MgO/silicon-on-insulator lateral spin valves are investigated. From the experimental measurements, we find that the local-MR through Si increases with increasing Vbias. This anomalous increase of local-MR as a function of Vbias can be understood by considering the standard drift-diffusion theory improved by taking into account the difference in the interface resistances and first order quantum effect between FM/MgO/Si (source) and Si/MgO/FM (drain) interfaces. The interface resistance dependence on experimentally obtained local-MR ratios also agrees with the improved standard spin diffusion theory. These results indicate that experimentally observed local-MR is certainly related to the spin signal through the Si bulk band.

Original languageEnglish
Article number17C514
JournalJournal of Applied Physics
Volume115
Issue number17
DOIs
Publication statusPublished - 2014 May 7

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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