Local magnetoresistance at room temperature in Si devices

Mizue Ishikawa, Makoto Tsukahara, Michihiro Yamada, Yoshiaki Saito, Kohei Hamaya

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


We show that there is a crystal orientation effect on the two-terminal local magnetoresistance (MR) in silicon (Si)-based lateral spin-valve (LSV) devices. When we compare the local MR effect between Si 100 and Si 110 LSV devices, the magnitude of the local MR signals for Si 100 LSV devices is always larger than that for Si 110 LSV devices. For Si 100 LSV devices, the magnitude of the room-temperature MR ratio reaches approximately 0.06%. We infer that it is important to consider the tunneling anisotropic spin polarization, which is due to the magnetization direction of the ferromagnetic contacts relative to the Si crystal orientation, in the fabricated LSV devices.

Original languageEnglish
Article number8412558
JournalIEEE Transactions on Magnetics
Issue number11
Publication statusPublished - 2018 Nov


  • Silicon (Si) spintronics
  • Spin detection
  • Spin injection

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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