Local lifetime and luminescence efficiency for the near-band-edge emission of freestanding GaN substrates determined using spatio-time-resolved cathodoluminescence

Y. Ishikawa, M. Tashiro, K. Hazu, Kentaro Furusawa, H. Namita, S. Nagao, K. Fujito, S. F. Chichibu

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Spatio-time-resolved cathodoluminescence measurements were carried out on low threading dislocation density freestanding GaN substrates grown by hydride vapor phase epitaxy. High-resolution cathodoluminescence imaging allows for visualization of nonradiative recombination channels in the vicinity of accidentally formed inversion domain boundaries. Local cathodoluminescence lifetimes (τCL) for the near-band-edge (NBE) emission are shown to be sensitively position dependent. A linear relation between the equivalent internal quantum efficiency (ηinteq) and τCL for the NBE emission was observed at room temperature under a weak excitation condition, and spatially resolved excitation led to the observation of the highest ηinteq of 20 with τCL of 3.3 ns.

Original languageEnglish
Article number212106
JournalApplied Physics Letters
Volume101
Issue number21
DOIs
Publication statusPublished - 2012 Nov 19

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Local lifetime and luminescence efficiency for the near-band-edge emission of freestanding GaN substrates determined using spatio-time-resolved cathodoluminescence'. Together they form a unique fingerprint.

  • Cite this