All the six lattice parameters (a, b, c, α, β and γ) of a Si (001) layer grown on a sapphire (1102) substrate were determined by convergent-beam electron diffraction with no assumption of crystal lattice symmetry. A lattice compression in the Si (001) plane and an elongation in the  direction were revealed. An anisotropic lattice compression in the (001) plane was clearly detected for the first time. That is, the lattice compression in the Si  direction, which is parallel to the sapphire  direction, was larger than that of the Si  direction, which is parallel to the sapphire  direction. It was also revealed that the lattice parameters of the Si-layer depend on the distance from the interface. Anisotropy of carrier mobility was reasonably explained in terms of the anisotropy of the lattice parameters determined.
- Anisotropic lattice compression
- Convergent-beam electron diffraction
- Lattice parameter determination
- Lattice strain
- Si on Sapphire
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