Local lattice parameter determination of a silicon (001) layer grown on a sapphire (1102) substrate using convergent-beam electron diffraction

Takayuki Akaogi, Kenji Tsuda, Masami Terauchi, Michiyoshi Tanaka

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

All the six lattice parameters (a, b, c, α, β and γ) of a Si (001) layer grown on a sapphire (1102) substrate were determined by convergent-beam electron diffraction with no assumption of crystal lattice symmetry. A lattice compression in the Si (001) plane and an elongation in the [001] direction were revealed. An anisotropic lattice compression in the (001) plane was clearly detected for the first time. That is, the lattice compression in the Si [100] direction, which is parallel to the sapphire [1101] direction, was larger than that of the Si [010] direction, which is parallel to the sapphire [1120] direction. It was also revealed that the lattice parameters of the Si-layer depend on the distance from the interface. Anisotropy of carrier mobility was reasonably explained in terms of the anisotropy of the lattice parameters determined.

Original languageEnglish
Pages (from-to)129-135
Number of pages7
JournalJournal of Electron Microscopy
Volume55
Issue number3
DOIs
Publication statusPublished - 2006 Jun

Keywords

  • Anisotropic lattice compression
  • Convergent-beam electron diffraction
  • Lattice parameter determination
  • Lattice strain
  • SOS
  • Si on Sapphire

ASJC Scopus subject areas

  • Instrumentation

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