Local excitation and emission dynamics of an isolated single basal-plane stacking-fault in GaN studied by spatio-time-resolved cathodoluminescence

Kentaro Furusawa, Yoichi Ishikawa, Hirotaka Ikeda, Kenji Fujito, Shigefusa Chichibu

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Local excitation and emission dynamics of an isolated "Type-I1" basal-plane stacking-fault (BSF) in very low dislocation density GaN were studied using spatio-time-resolved cathodoluminescence. The low temperature lifetime of the BSF emission was quantified to be 640 ps. The carrier diffusion length was estimated by observing the temporal delay of the BSF peak relative to the free-exciton signal as a function of distance from the BSF. The results indicate that the near-band-edge emission leads to subsequent optical excitation of the BSF that increases the apparent diffusion length. Limiting the observation volume can improve the spatial resolution.

Original languageEnglish
Article number030303
JournalJapanese journal of applied physics
Volume54
Issue number3
DOIs
Publication statusPublished - 2015 Mar 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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