TY - JOUR
T1 - Local excitation and emission dynamics of an isolated single basal-plane stacking-fault in GaN studied by spatio-time-resolved cathodoluminescence
AU - Furusawa, Kentaro
AU - Ishikawa, Yoichi
AU - Ikeda, Hirotaka
AU - Fujito, Kenji
AU - Chichibu, Shigefusa F.
N1 - Publisher Copyright:
© 2015 The Japan Society of Applied Physics.
PY - 2015/3/1
Y1 - 2015/3/1
N2 - Local excitation and emission dynamics of an isolated "Type-I1" basal-plane stacking-fault (BSF) in very low dislocation density GaN were studied using spatio-time-resolved cathodoluminescence. The low temperature lifetime of the BSF emission was quantified to be 640 ps. The carrier diffusion length was estimated by observing the temporal delay of the BSF peak relative to the free-exciton signal as a function of distance from the BSF. The results indicate that the near-band-edge emission leads to subsequent optical excitation of the BSF that increases the apparent diffusion length. Limiting the observation volume can improve the spatial resolution.
AB - Local excitation and emission dynamics of an isolated "Type-I1" basal-plane stacking-fault (BSF) in very low dislocation density GaN were studied using spatio-time-resolved cathodoluminescence. The low temperature lifetime of the BSF emission was quantified to be 640 ps. The carrier diffusion length was estimated by observing the temporal delay of the BSF peak relative to the free-exciton signal as a function of distance from the BSF. The results indicate that the near-band-edge emission leads to subsequent optical excitation of the BSF that increases the apparent diffusion length. Limiting the observation volume can improve the spatial resolution.
UR - http://www.scopus.com/inward/record.url?scp=84924278649&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84924278649&partnerID=8YFLogxK
U2 - 10.7567/JJAP.54.030303
DO - 10.7567/JJAP.54.030303
M3 - Article
AN - SCOPUS:84924278649
VL - 54
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 3
M1 - 030303
ER -