Local electronic structures of GaMnAs observed by cross-sectional scanning tunneling microscopy

T. Tsuruoka, N. Tachikawa, S. Ushioda, F. Matsukura, K. Takamura, H. Ohno

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)

Abstract

Using cross-sectional scanning tunneling microscopy (STM), we have investigated the local electronic properties of molecular-beam epitaxy grown GaMnAs layers on a p-GaAs substrate. The STM image shows light and dark areas with the average size on the order of nm. From conductance spectra measured with the STM, the bandgap of the GaMnAs is estimated to be 1.23±0.05eV. An apparent conductance within the bandgap indicates the presence of hole states in the valence band, which are induced by Mn acceptors. A conductance peak at 0.7 eV above the valence band edge can be identified with electron tunneling into the ionization levels of As antisites.

Original languageEnglish
Pages (from-to)2800-2802
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number15
DOIs
Publication statusPublished - 2002 Oct 7

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Local electronic structures of GaMnAs observed by cross-sectional scanning tunneling microscopy'. Together they form a unique fingerprint.

Cite this