Local electrical properties of n-AlInAs/i-GaInAs electron channel structures characterized by theprobe-electron-beam-induced current technique

Kentaro Watanabe, Takeshi Nokuo, Jun Chen, Takashi Sekiguchi

Research output: Contribution to journalLetterpeer-review

3 Citations (Scopus)

Abstract

We developed a probe-electron-beam-induced current (probe-EBIC) technique to investigate the electrical properties of n-Al0.48In0.52As/i-Ga0.30In0.70As electron channel structures for a high-electron-mobility transistor, grown on a lattice-matched InP substrate and lattice-mismatched GaAs (001) and Si (001) substrates. EBIC imaging of planar surfaces at low magnifications revealed misfit dislocations originating from the AlInAs-graded buffer layer. The cross-sections of GaInAs channel structures on an InP substrate were studied by high-magnification EBIC imaging as well as cathodoluminescence (CL) spectroscopy. EBIC imaging showed that the structure is nearly defect-free and the carrier depletion zone extends from the channel toward the i-AlInAs buffer layer.

Original languageEnglish
Pages (from-to)161-166
Number of pages6
JournalMicroscopy
Volume63
Issue number2
DOIs
Publication statusPublished - 2014 Apr
Externally publishedYes

Keywords

  • Cathodoluminescence
  • Electron beam-induced current
  • HEMT

ASJC Scopus subject areas

  • Structural Biology
  • Instrumentation
  • Radiology Nuclear Medicine and imaging

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