Abstract
We developed a probe-electron-beam-induced current (probe-EBIC) technique to investigate the electrical properties of n-Al0.48In0.52As/i-Ga0.30In0.70As electron channel structures for a high-electron-mobility transistor, grown on a lattice-matched InP substrate and lattice-mismatched GaAs (001) and Si (001) substrates. EBIC imaging of planar surfaces at low magnifications revealed misfit dislocations originating from the AlInAs-graded buffer layer. The cross-sections of GaInAs channel structures on an InP substrate were studied by high-magnification EBIC imaging as well as cathodoluminescence (CL) spectroscopy. EBIC imaging showed that the structure is nearly defect-free and the carrier depletion zone extends from the channel toward the i-AlInAs buffer layer.
Original language | English |
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Pages (from-to) | 161-166 |
Number of pages | 6 |
Journal | Microscopy |
Volume | 63 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2014 Apr |
Externally published | Yes |
Keywords
- Cathodoluminescence
- Electron beam-induced current
- HEMT
ASJC Scopus subject areas
- Structural Biology
- Instrumentation
- Radiology Nuclear Medicine and imaging