Local electrical properties of n-AlInAs/i-GaInAs electron channel structures characterized by theprobe-electron-beam-induced current technique

Kentaro Watanabe; Takeshi Nokuo; Jun Chen; Takashi Sekiguchi

doi:10.1093/jmicro/dft050

Local electrical properties of n-AlInAs/i-GaInAs electron channel structures characterized by theprobe-electron-beam-induced current technique

Kentaro Watanabe, Takeshi Nokuo, Jun Chen, Takashi Sekiguchi

Research output: Contribution to journal › Letter › peer-review

3 Citations (Scopus)

Abstract

We developed a probe-electron-beam-induced current (probe-EBIC) technique to investigate the electrical properties of n-Al_0.48In_0.52As/i-Ga_0.30In_0.70As electron channel structures for a high-electron-mobility transistor, grown on a lattice-matched InP substrate and lattice-mismatched GaAs (001) and Si (001) substrates. EBIC imaging of planar surfaces at low magnifications revealed misfit dislocations originating from the AlInAs-graded buffer layer. The cross-sections of GaInAs channel structures on an InP substrate were studied by high-magnification EBIC imaging as well as cathodoluminescence (CL) spectroscopy. EBIC imaging showed that the structure is nearly defect-free and the carrier depletion zone extends from the channel toward the i-AlInAs buffer layer.

Original language	English
Pages (from-to)	161-166
Number of pages	6
Journal	Microscopy
Volume	63
Issue number	2
DOIs	https://doi.org/10.1093/jmicro/dft050
Publication status	Published - 2014 Apr
Externally published	Yes

Keywords

Cathodoluminescence
Electron beam-induced current
HEMT

ASJC Scopus subject areas

Structural Biology
Instrumentation
Radiology Nuclear Medicine and imaging

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@article{7ffda4f4f91244cf86378ac2af3a56c0,

title = "Local electrical properties of n-AlInAs/i-GaInAs electron channel structures characterized by theprobe-electron-beam-induced current technique",

abstract = "We developed a probe-electron-beam-induced current (probe-EBIC) technique to investigate the electrical properties of n-Al0.48In0.52As/i-Ga0.30In0.70As electron channel structures for a high-electron-mobility transistor, grown on a lattice-matched InP substrate and lattice-mismatched GaAs (001) and Si (001) substrates. EBIC imaging of planar surfaces at low magnifications revealed misfit dislocations originating from the AlInAs-graded buffer layer. The cross-sections of GaInAs channel structures on an InP substrate were studied by high-magnification EBIC imaging as well as cathodoluminescence (CL) spectroscopy. EBIC imaging showed that the structure is nearly defect-free and the carrier depletion zone extends from the channel toward the i-AlInAs buffer layer.",

keywords = "Cathodoluminescence, Electron beam-induced current, HEMT",

author = "Kentaro Watanabe and Takeshi Nokuo and Jun Chen and Takashi Sekiguchi",

note = "Funding Information: This work was supported by JSPS KAKENHI Grant Number 23760022.",

year = "2014",

month = apr,

doi = "10.1093/jmicro/dft050",

language = "English",

volume = "63",

pages = "161--166",

journal = "Microscopy (Oxford, England)",

issn = "2050-5698",

publisher = "Japanese Society of Microscopy",

number = "2",

}

TY - JOUR

T1 - Local electrical properties of n-AlInAs/i-GaInAs electron channel structures characterized by theprobe-electron-beam-induced current technique

AU - Watanabe, Kentaro

AU - Nokuo, Takeshi

AU - Chen, Jun

AU - Sekiguchi, Takashi

N1 - Funding Information: This work was supported by JSPS KAKENHI Grant Number 23760022.

PY - 2014/4

Y1 - 2014/4

N2 - We developed a probe-electron-beam-induced current (probe-EBIC) technique to investigate the electrical properties of n-Al0.48In0.52As/i-Ga0.30In0.70As electron channel structures for a high-electron-mobility transistor, grown on a lattice-matched InP substrate and lattice-mismatched GaAs (001) and Si (001) substrates. EBIC imaging of planar surfaces at low magnifications revealed misfit dislocations originating from the AlInAs-graded buffer layer. The cross-sections of GaInAs channel structures on an InP substrate were studied by high-magnification EBIC imaging as well as cathodoluminescence (CL) spectroscopy. EBIC imaging showed that the structure is nearly defect-free and the carrier depletion zone extends from the channel toward the i-AlInAs buffer layer.

AB - We developed a probe-electron-beam-induced current (probe-EBIC) technique to investigate the electrical properties of n-Al0.48In0.52As/i-Ga0.30In0.70As electron channel structures for a high-electron-mobility transistor, grown on a lattice-matched InP substrate and lattice-mismatched GaAs (001) and Si (001) substrates. EBIC imaging of planar surfaces at low magnifications revealed misfit dislocations originating from the AlInAs-graded buffer layer. The cross-sections of GaInAs channel structures on an InP substrate were studied by high-magnification EBIC imaging as well as cathodoluminescence (CL) spectroscopy. EBIC imaging showed that the structure is nearly defect-free and the carrier depletion zone extends from the channel toward the i-AlInAs buffer layer.

KW - Cathodoluminescence

KW - Electron beam-induced current

KW - HEMT

UR - http://www.scopus.com/inward/record.url?scp=84903576062&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84903576062&partnerID=8YFLogxK

U2 - 10.1093/jmicro/dft050

DO - 10.1093/jmicro/dft050

M3 - Letter

AN - SCOPUS:84903576062

VL - 63

SP - 161

EP - 166

JO - Microscopy (Oxford, England)

JF - Microscopy (Oxford, England)

SN - 2050-5698

IS - 2

ER -