Local deep level transient spectroscopy using super-higher-order scanning nonlinear dielectric microscopy

N. Chinone, R. Kosugi, Y. Tanaka, S. Harada, H. Okumura, Y. Cho

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A new technique for local deep level transient spectroscopy imaging using super-higher-order scanning nonlinear dielectric microscopy is proposed. Using this technique, SiO2/SiC structure samples with different post oxidation annealing conditions were measured. We observed that the local DLTS signal decreases with post oxidation annealing (POA), which agrees with the well-known phenomena that POA reduces trap density. Furthermore, obtained local DLTS images had dark and bright areas, which is considered to show the trap distribution at/near SiO2/SiC interface.

Original languageEnglish
Pages (from-to)566-569
Number of pages4
JournalMicroelectronics Reliability
Volume64
DOIs
Publication statusPublished - 2016 Sep 1

Keywords

  • Local deep level transient spectroscopy
  • Super-higher-order scanning nonlinear dielectric microscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Local deep level transient spectroscopy using super-higher-order scanning nonlinear dielectric microscopy'. Together they form a unique fingerprint.

  • Cite this