Local current distribution in a ferromagnetic tunnel junction measured using conducting atomic force microscopy

Y. Ando, H. Kameda, H. Kubota, T. Miyazaki

Research output: Contribution to journalConference articlepeer-review

30 Citations (Scopus)

Abstract

The local electrical properties were measured simultaneously with the topography for a Ta(50 Å)/Fe20Ni80(50 Å)/IrMn(150 Å)/Co(50 Å)/Al(13 Å)-oxide junction. The electrical image showed the contrast with around a few nm lateral size and a strong correlation with the topographical image was not observed. In the local current-voltage characteristics, data within the bias voltage of ±1.5 V were fitted well to Simmon's equation and we obtained the barrier height Φ = 1.9eV and the thickness d = 12 Å. On the other hand, data with the bias voltages higher than 3 V were fitted well to Fowler-Nordheim equation. The histogram of current density was calculated by taking into consideration a Gaussian distribution of the barrier thickness and the height. The distribution of the barrier height can explain the experimental result realistically.

Original languageEnglish
Pages (from-to)5206-5208
Number of pages3
JournalJournal of Applied Physics
Volume87
Issue number9 II
DOIs
Publication statusPublished - 2000 May
Event44th Annual Conference on Magnetism and Magnetic Materials - San Jose, CA, United States
Duration: 1999 Nov 151999 Nov 18

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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