Local current distribution and electrical properties of a magnetic tunnel junction using conducting atomic force microscopy

A. Canizo-Cabrera, Simon C. Li, Min Fong Shu, Jia Mou Lee, Valentin Garcia-Vazquez, C. C. Chen, J. C. Wu, M. Takahashi, Te Ho Wu

    Research output: Contribution to journalArticlepeer-review

    4 Citations (Scopus)

    Abstract

    Local topographical and electrical properties were simultaneously measured for a magnetic tunnel junction formed by Ta (50 Å)/Ni-Fe (20 Å)/Cu (50 Å)/Mn75 Ir25 (100 Å)/Co 70Fe30(40 Å)/Al-O (8-15 Å)/Co 70Fe30 (40 Å)/Ni-Fe (100 Å)/Ta (50 Å). Local current-voltage (I-V) characteristic curves were obtained for different contrast levels in the electrical current distribution images on the test sample. With the purpose of obtaining quantitative values for the barrier characteristics, data was analyzed by the Simmons' equation from -1.0 to 1.0 V. The magneto resistance ratio values were estimated to be 35.02%, with a bias voltage of 0.36 V, when applying a magnetic field of ±200 Oe. In addition, a study on the ramping effect on the dielectric tunneling capacitance and analytical resistance-capacitance (RC) model were carried out.

    Original languageEnglish
    Pages (from-to)887-891
    Number of pages5
    JournalIEEE Transactions on Magnetics
    Volume41
    Issue number2
    DOIs
    Publication statusPublished - 2005 Feb 1

    Keywords

    • Conductive atomic force microscopy (CAFM)
    • Dielectric tunnel capacitance
    • Local electric transport
    • Magnetic tunnel junction
    • Magnetoresistance ratio
    • RC model
    • Ramping effect

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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