Local current conduction due to edge dislocations in deformed GaN studied by scanning spreading resistance microscopy

Takashi Yokoyama, Yasushi Kamimura, Keiichi Edagawa, Ichiro Yonenaga

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Local electrical conductivities were measured for plastically deformed n-GaN single crystals by scanning spreading resistance microscopy (SSRM). In the SSRM images, many spots with high conductivity were observed, which can be attributed to introduced edge dislocations whose line direction is along [0 0 0 1] and Burgers vector is b = (a/3)[1 1 0]. This result is in contrast to the previous studies which showed that grown-in edge dislocations of the same type in GaN films exhibit virtually no conduction. This suggests that the dislocation conduction depends sensitively on the dislocation core structure. Current-voltage spectra indicated a Frenkel-Poole mechanism for the conduction.

Original languageEnglish
Article numberap120318
JournalEPJ Applied Physics
Volume61
Issue number1
DOIs
Publication statusPublished - 2013 Jan

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Local current conduction due to edge dislocations in deformed GaN studied by scanning spreading resistance microscopy'. Together they form a unique fingerprint.

Cite this